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参数资料
| 型号： | 935272488115 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 固定正电压单路输出LDO稳压器 |
| 英文描述： | 3.1 V FIXED POSITIVE LDO REGULATOR, 0.12 V DROPOUT, PDSO5 |
| 封装： | 1.60 MM, PLASTIC, SOT-680-1, SO-5 |
| 文件页数： | 10/16页 |
| 文件大小： | 235K |
| 代理商： | 935272488115 |
Philips Semiconductors
Product data
SA57000-XX
CapFREE
150 mA, low-noise, low dropout regulator
with thermal protection
2003 Apr 01
3
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TEMPERATURE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
RANGE
SA57000-XXD
SOT23-5,
SO5
plastic small outline package; 5 leads (see dimensional drawing)
SOT680-1
–40 to +85
°C
SA57000-XXUK
WL-CSP5
wafer level, chip-scale package; 5 bumps (see dimensional drawing)
–40 to +85
°C
NOTE:
The device has seven voltage output options, indicated by the XX
on the Type Number.
XX
VOLTAGE (Typical)
25
2.5 V
28
2.8 V
29
2.9 V
30
3.0 V
31
3.1 V
33
3.3 V
36
3.6 V
PIN CONFIGURATION
SA00556
1
2
34
5VOUT
PWROK
PWRON
GND
VIN
SA57000-XXD
TOP VIEW
A3
A1
B2
C3
C1
TOP VIEW
(BALLS ARE ON THE BOTTOM)
SA57000-XXUK
GND
VIN
VOUT
PWROK
PWRON
Figure 2. Pin configurations.
PIN DESCRIPTION
PIN
BALL
SYMBOL
DESCRIPTION
1
A1
VIN
Regulator input. VOUT(nom) + 0.5 V to 6.5 V. No bypass capacitor required.
2
B2
GND
Ground.
3
C1
PWRON
Power-on input. Active-HIGH. A logic LOW powers down the regulator. The shutdown quiescent current is
typically 50 nA. Connect to VIN for manual operation.
4
C3
PWROK
Power OK indicator, including thermal warning. Connect a 10 k
resistor between PWROK and VOUT.
Active-LOW open-drain output indicates an out-of-regulation condition when power falls typically 6% below
VOUT(nom), or thermal warning (trips at 127
°C ± 2 °C).
5
A3
VOUT
Regulator output. Sources up to 150 mA. No bypass capacitors required.
MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VIN
VIN to GND voltage
–0.3
6.5
VDC
VPWRON
PWRON to GND voltage
–0.3
6.5
VDC
VOUT
OUT to GND voltage
–0.3
VIN + 0.3
VDC
Tamb
Operating ambient temperature
–40
+85
°C
Tj
Junction temperature
–
+125
°C
Tstg
Storage temperature
–65
+160
°C
P
Power dissipation
Tamb = 25 °C
–
637
mW
Rth(j-a)
Thermal resistance from junction to ambient
–
140
°C/W
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