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参数资料
| 型号： | 93AA46C |
| 厂商： | Microchip Technology Inc. |
| 元件分类： | EEPROM |
| 英文描述： | 1K Microwire Compatible Serial EEPROM |
| 中文描述： | 一千微丝兼容串行EEPROM |
| 文件页数： | 5/24页 |
| 文件大小： | 403K |
| 代理商： | 93AA46C |
2003 Microchip Technology Inc.
DS21749D-page 5
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
2.0
FUNCTIONAL DESCRIPTION
When the ORG* pin is connected to V
CC
, the (x16)
organization is selected. When it is connected to
ground, the (x8) organization is selected. Instructions,
addresses and write data are clocked into the DI pin on
the rising edge of the clock (CLK). The DO pin is
normally held in a HIGH-Z state except when reading
data from the device, or when checking the READY/
BUSY status during a programming operation. The
READY/BUSY status can be verified during an Erase/
Write operation by polling the DO pin; DO low indicates
that programming is still in progress, while DO high
indicates the device is ready. DO will enter the HIGH-Z
state on the falling edge of CS.
2.1
Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK, and DI
may change in any combination (except to that of a
Start condition), without resulting in any device
operation (READ, WRITE, ERASE, EWEN, EWDS,
ERAL, or WRAL). As soon as CS is high, the device is
no longer in Standby mode.
An instruction following a Start condition will only be
executed if the required opcode, address and data bits
for any particular instruction are clocked in.
2.2
Data In/Data Out (DI/DO)
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the READ operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin. In order to
limit this current, a resistor should be connected
between DI and DO.
2.3
Data Protection
All modes of operation are inhibited when V
CC
is below
a typical voltage of 1.5V for '93AA' and '93LC' devices
or 3.8V for '93C' devices.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
Note:
For added protection, an EWDS command
should be performed after every write
operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an
EWEN
instruction must be
performed before the initial
ERASE
or
WRITE
instruction
can be executed.
Block Diagram
Memory
Array
Data Register
Mode
Decode
Logic
Clock
Register
Address
Decoder
Address
Counter
Output
Buffer
DO
DI
ORG*
CS
CLK
V
CC
V
SS
*ORG input is not available on A/B devices
相关PDF资料 |
PDF描述 |
|---|---|
| 93C46A | 1K Microwire Compatible Serial EEPROM |
| 93C46C | 1K Microwire Compatible Serial EEPROM |
| 93LC46C | 1K Microwire Compatible Serial EEPROM |
| 93AA56 | 2K 1.8V CMOS Serial EEPROM(1.8~5.5V,2K 位,1M次可自定时擦写周期,EEPROM) |
| 93AA66 | 4K 1.8V CMOS Serial EEPROM(1.8~5.5V,4K位,1M次可自定时擦写周期,EEPROM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93AA46C/S15K | 制造商:Microchip Technology Inc 功能描述:1K, 128 X 8 OR 64 X 16, SERIAL - Gel-pak, waffle pack, wafer, diced wafer on film |
| 93AA46C/W15K | 功能描述:电可擦除可编程只读存储器 1K, 128 X 8 OR 64 X 16, SERIAL EE 1.8V WAFER RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA46C/WF15K | 功能描述:电可擦除可编程只读存储器 1K, 128 X 8 OR 64 X 16, SERIAL EE 1.8V WAFER on FR RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA46C-E/MC | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K Microwire Compatible Serial EEPROM |
| 93AA46C-E/MCG | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K Microwire Compatible Serial EEPROM |
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