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参数资料
| 型号： | 93AA66-SN |
| 厂商： | Microchip Technology Inc. |
| 英文描述： | 1K/2K/4K 1.8V Microwire Serial EEPROM |
| 中文描述： | 1K/2K/4K 1.8V的微型导线串行EEPROM |
| 文件页数： | 5/12页 |
| 文件大小： | 107K |
| 代理商： | 93AA66-SN |
1996 Microchip Technology Inc.
DS20067G-page 5
93AA46/56/66
2.8
Erase All (ERAL)
The ERAL instruction will erase the entire memory
array to the logical “1” state. The ERAL cycle is identical
to the ERASE cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences at
the falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the self clocking
mode. The ERAL instruction is guaranteed at 5V
±
10%.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire write cycle is complete.
The ERAL cycle takes (8 ms typical).
2.9
Write All (WRAL)
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences at the
falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the self clocking
mode. The WRAL command does include an auto-
matic ERAL cycle for the device. Therefore, the WRAL
instruction does not require an ERAL instruction but the
chip must be in the EWEN status. The WRAL instruc-
tion is guaranteed at 5V
±
10%.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
The WRAL cycle takes 16 ms typical.
FIGURE 2-1:
SYNCHRONOUS DATA TIMING
FIGURE 2-2:
READ TIMING
CLK
STATUS VALID
V
IH
V
IL
CS
T
CSS
T
DIS
T
DIH
T
SV
T
CSH
T
CKH
T
CKL
T
PD
T
CZ
T
CZ
T
PD
V
IH
V
IL
DI
V
IH
V
IL
DO
(READ)
V
OH
V
OL
DO
(PROGRAM)
V
OH
V
OL
Tri-State is a registered trademark of National Semiconductor Incorporated.
CLK
CS
T
CSL
A
A0
0
1 1
DI
DO
Dx
D0
0
Dx*
D0
Dx*
n
D0
TRI-STATE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 93AA66T/SN | 功能描述:电可擦除可编程只读存储器 512x8-256x16 - 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66T-I/SN | 功能描述:电可擦除可编程只读存储器 512x8-256x16 - 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66X/SN | 功能描述:电可擦除可编程只读存储器 512x8-256x16 1.8V RP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66XT/SN | 功能描述:电可擦除可编程只读存储器 512x8-256x16 1.8V RP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA76/P | 功能描述:电可擦除可编程只读存储器 516x8-1024x8 - 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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