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参数资料
| 型号： | 93AA66AXIMSG |
| 厂商： | Microchip Technology Inc. |
| 元件分类： | EEPROM |
| 英文描述： | 4K Microwire Compatible Serial EEPROM |
| 中文描述： | 4K的微丝兼容串行EEPROM |
| 文件页数： | 8/24页 |
| 文件大小： | 405K |
| 代理商： | 93AA66AXIMSG |
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795B-page 8
2003 Microchip Technology Inc.
2.6
ERASE/WRITE DISABLE And ENABLE (EWDS/EWEN)
The 93XX66A/B/C powers up in the ERASE/WRITE
Disable (
EWDS
) state. All Programming modes must be
preceded by an ERASE/WRITE Enable (
EWEN
) instruc-
tion. Once the
EWEN
instruction is executed, program-
ming remains enabled until an
EWDS
instruction is
executed or Vcc is removed from the device.
To protect against accidental data disturbance, the
EWDS
instruction can be used to disable all ERASE/
WRITE functions and should follow all programming
operations. Execution of a
READ
instruction is indepen-
dent of both the
EWEN
and
EWDS
instructions.
FIGURE 2-5:
EWDS TIMING
FIGURE 2-6:
EWEN TIMING
2.7
READ
The
READ
instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-Version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string. The output data bits will toggle on
the rising edge of the CLK and are stable after the
specified time delay (T
PD
). Sequential read is possible
when CS is held high. The memory data will automati-
cally cycle to the next register and output sequentially.
FIGURE 2-7:
READ TIMING
CS
CLK
DI
1
0
0
0
0
X
X
T
CSL
1
X
CS
CLK
DI
0
0
1
1
X
T
CSL
CS
CLK
DI
DO
1
1
0
An
A0
HIGH-Z
0
Dx
D0
Dx
D0
Dx
D0
相关PDF资料 |
PDF描述 |
|---|---|
| 93C66AXIMSG | 4K Microwire Compatible Serial EEPROM |
| 93AA66AXEOT | 4K Microwire Compatible Serial EEPROM |
| 93AA66AXESN | 4K Microwire Compatible Serial EEPROM |
| 93C66AXESN | 4K Microwire Compatible Serial EEPROM |
| 93C66AXEOT | 4K Microwire Compatible Serial EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93AA66AXT-I/SN | 功能描述:电可擦除可编程只读存储器 512x8 - 1.8V Rot Pin RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66AXT-I/SNG | 功能描述:电可擦除可编程只读存储器 512x8 - 1.8V Rot Pin Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66B-I/MS | 功能描述:电可擦除可编程只读存储器 256x16 - 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66B-I/MSG | 功能描述:电可擦除可编程只读存储器 256x16 - 1.8V Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93AA66B-I/P | 功能描述:电可擦除可编程只读存储器 256x16 - 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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