参数资料
型号: 93AA86CT-I/SN
厂商: Microchip Technology
文件页数: 10/38页
文件大小: 0K
描述: IC EEPROM 16KBIT 3MHZ 8SOIC
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K(2K x 8 或 1K x 16)
速度: 1MHz,2MHz,3MHz
接口: Microwire 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
2.9
Write All (WRAL)
The DO pin indicates the Ready/ Busy status of the
The Write All ( WRAL ) instruction will write the entire
memory array with the data specified in the command.
device if CS is brought high after a minimum of 250 ns
low (T CSL ).
The self-timed auto-erase and programming cycle is
initiated by the rising edge of CLK on the last data bit.
Clocking of the CLK pin is not necessary after the
device has entered the WRAL cycle. The WRAL
command does include an automatic ERAL cycle for
the device. Therefore, the WRAL instruction does not
require an ERAL instruction, but the chip must be in the
EWEN status.
Note:
Note:
The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/ Busy status from DO.
V CC must be ? 4.5V for proper operation of WRAL.
FIGURE 2-7:
WRAL TIMING
T CSL
CS
CLK
DI
1
0
0
0
1
x
???
x
Dx
???
D0
T SV
T CZ
DO
High-Z
Busy
Ready
H IGH -Z
T WL
DS21797L-page 10
? 2003-2012 Microchip Technology Inc.
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