参数资料
型号: 93C46B-TI/SNX
元件分类: PROM
英文描述: 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: 0.150 INCH, LEAD FREE, PLASTIC, MS-012, SOIC-8
文件页数: 7/38页
文件大小: 703K
代理商: 93C46B-TI/SNX
2005 Microchip Technology Inc.
DS21929A-page 15
93XX46X/56X/66X/76X/86X
3.8
WRITE
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. For 93AAXX and 93LCXX devices,
after the last data bit is clocked into DI, the falling edge
of CS initiates the self-timed auto-erase and program-
ming cycle. For 93CXX devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
FIGURE 3-8:
WRITE TIMING FOR 93AAXX AND 93LCXX DEVICES
FIGURE 3-9:
WRITE TIMING FOR 93CXX DEVICES
Note:
For devices with PE functionality such as
the 93XX76C or 93XX86C, the write
sequence requires a logic low signal on
the PE pin prior to the rising edge of the
last data bit.
Note:
After the Write cycle is complete, issuing a
Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
Busy
Ready
High-Z
Twc
TCSL
TCZ
TSV
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
Busy
Ready
High-Z
Twc
TCSL
TCZ
TSV
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