参数资料
型号: 93C66BX-E/MC
元件分类: PROM
英文描述: 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: 2 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, DFN-8
文件页数: 28/30页
文件大小: 550K
代理商: 93C66BX-E/MC
2008 Microchip Technology Inc.
DS21795D-page 7
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.4
Erase
The ERASE instruction forces all data bits of the speci-
fied address to the logical ‘1’ state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed program-
ming cycle, except on ‘93C’ devices where the rising
edge of CLK before the last address bit initiates the
write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
Note:
Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
FIGURE 2-1:
ERASE TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-2:
ERASE TIMING FOR 93C DEVICES
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1
AN-2
A0
TSV
TCZ
Busy
Ready
High-Z
TWC
High-Z
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1
AN-2
A0
TSV
TCZ
Busy
Ready
High-Z
TWC
High-Z
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