参数资料
型号: 93C76BT-E/OT
厂商: Microchip Technology
文件页数: 7/36页
文件大小: 0K
描述: IC EEPROM 8KBIT 3MHZ SOT23-6
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (512 x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 带卷 (TR)
93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
2.6
Erase/Write Disable and Enable
Once the EWEN instruction is executed, programming
(EWDS/EWEN)
The 93XX76A/B/C powers up in the Erase/Write
Disable ( EWDS ) state. All programming modes must be
preceded by an Erase/Write Enable ( EWEN ) instruction.
remains enabled until an EWDS instruction is executed
or V CC is removed from the device.
To protect against accidental data disturbance, the
EWDS instruction can be used to disable all erase/write
functions and should follow all programming opera-
tions. Execution of a READ instruction is independent of
both the EWEN and EWDS instructions.
FIGURE 2-3:
EWDS TIMING
T CSL
CS
CLK
DI
1
0
0
0
0
x
???
x
FIGURE 2-4:
EWEN TIMING
T CSL
CS
CLK
DI
1
0
0
1
1
x
???
x
2.7
Read
The output data bits will toggle on the rising edge of the
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string.
CLK and are stable after the specified time delay (T PD ).
Sequential read is possible when CS is held high. The
memory data will automatically cycle to the next register
and output sequentially.
FIGURE 2-5:
CS
CLK
READ TIMING
DI
1
1
0
A N
???
A0
DO
High-Z
0
Dx
???
D0
Dx
???
D0
Dx
???
D0
? 2003-2012 Microchip Technology Inc.
DS21796M-page 7
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93C76BT-I/MS 功能描述:电可擦除可编程只读存储器 8k 512 X 16 SERIAL EE,IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8