参数资料
型号: 93C76CT-I/ST
厂商: Microchip Technology
文件页数: 9/36页
文件大小: 0K
描述: IC EEPROM 8KBIT 3MHZ 8TSSOP
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K(1K x 8 或 512 x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
2.9
Write All (WRAL)
The DO pin indicates the Ready/ Busy status of the
The Write All ( WRAL ) instruction will write the entire
memory array with the data specified in the command.
device if CS is brought high after a minimum of 250 ns
low (T CSL ).
The self-timed auto-erase and programming cycle is
initiated by the rising edge of CLK on the last data bit.
Clocking of the CLK pin is not necessary after the
device has entered the WRAL cycle. The WRAL
command includes an automatic ERAL cycle for the
device, so the WRAL instruction does not require an
ERAL instruction. However, the chip must be in the
EWEN status.
Note:
Note:
The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/ Busy status from DO.
V CC must be ? 4.5V for proper operation of WRAL.
FIGURE 2-7:
WRAL TIMING
T CSL
CS
CLK
DI
1
0
0
0
1
x
???
x
Dx
???
D0
T SV
T CZ
DO
High-Z
Busy
Ready
H IGH -Z
T WL
? 2003-2012 Microchip Technology Inc.
DS21796M-page 9
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93C76-E/SN 功能描述:电可擦除可编程只读存储器 516x8 Or 1024x8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
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