参数资料
型号: 93C86BT-I/MS
元件分类: PROM
英文描述: 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: PLASTIC, MO-187, MSOP-8
文件页数: 13/15页
文件大小: 636K
代理商: 93C86BT-I/MS
2007 Microchip Technology Inc.
Preliminary
DS21797H-page 7
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
2.4
Erase
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. The rising
edge of CLK before the last address bit initiates the
write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
FIGURE 2-1:
ERASE TIMING
Note:
After the Erase cycle is complete, issuing
a Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1 AN-2
A0
TSV
TCZ
Busy
Ready
High-Z
TWC
High-Z
相关PDF资料
PDF描述
93AA86A-I/OT 2K X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6
93C86AT-I/MS 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93AA86C-E/SN 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8
93C86B-E/MC 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
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