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参数资料
| 型号： | 93LC46CT-E/MCG |
| 元件分类： | PROM |
| 英文描述： | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8 |
| 文件页数： | 3/28页 |
| 文件大小： | 420K |
| 代理商： | 93LC46CT-E/MCG |
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2005 Microchip Technology Inc.
DS21749F-page 11
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
2.9
Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AA46A/B/C and 93LC46A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C46A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL
instruction does not require an ERAL instruction,
but the chip must be in the EWEN status.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
VCC must be
≥ 4.5V for proper operation of WRAL.
FIGURE 2-10:
WRAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-11:
WRAL TIMING FOR 93C DEVICES
Note:
After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS
CLK
DI
DO
HIGH-Z
1
0
01
x
x
Dx
D0
High-Z
Busy
Ready
TWL
VCC must be
≥ 4.5V for proper operation of WRAL.
TCSL
TSV
TCZ
CS
CLK
DI
DO
HIGH-Z
1
0
01
x
x
Dx
D0
High-Z
Busy
Ready
TWL
TCSL
TSV
TCZ
相关PDF资料 |
PDF描述 |
|---|---|
| 93LC46AX-I/MCG | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC46CX-E/MCG | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C46BX-E/MCG | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93AA46CXT-I/STG | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C46CXT-I/MCG | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC46CT-I/MC | 功能描述:电可擦除可编程只读存储器 1K 128X8 OR 64X16 SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC46CT-I/MCG | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K Microwire Compatible Serial EEPROM |
| 93LC46CT-I/MNY | 功能描述:电可擦除可编程只读存储器 1K 128X8 OR 64X16 SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC46CT-I/MS | 功能描述:电可擦除可编程只读存储器 128x8 Or 64x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC46CT-I/MSG | 功能描述:电可擦除可编程只读存储器 128x8 Or 64x16 Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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