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参数资料
| 型号： | 93LC56-P |
| 厂商： | Microchip Technology Inc. |
| 英文描述： | 1K/2K/4K 2.0V Microwire Serial EEPROM |
| 中文描述： | 1K/2K/4K 2.0V的微型导线串行EEPROM |
| 文件页数： | 11/12页 |
| 文件大小： | 222K |
| 代理商： | 93LC56-P |
93LC46/56/66
DS11168L-page 8
1997 Microchip Technology Inc.
3.8
WRITE
The WRITE instruction is followed by 8 bits (or by 16
bits) of data which are written into the specied
address. After the last data bit is put on the DI pin, CS
must be brought low before the next rising edge of the
CLK clock. This falling edge of CS initiates the self-
timed auto-erase and programming cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specied address has been written with the data
specied and the device is ready for another instruc-
tion.
The WRITE cycle takes 4 ms per word (Typical).
3.9
Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specied in the command.
The WRAL cycle is completely self-timed and com-
mences at the falling edge of the CS. Clocking of the
CLK pin is not necessary after the device has entered
the self clocking mode. The WRAL command does
include an automatic ERAL cycle for the device. There-
fore, the WRAL instruction does not require an ERAL
instruction, but the chip must be in the EWEN status.
The WRAL instruction is guaranteed at VCC = +4.5V to
+6.0V.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
The WRAL cycle takes 30 ms maximum (16 ms typical).
FIGURE 3-7:
WRITE TIMING
FIGURE 3-8:
WRAL TIMING
CLK
CS
TCSL
0
1
DI
BUSY
D0
A
1
A0
Dx
READY
TWC
DO
TRI-STATE
n
STANDBY
TRI_STATE
CLK
CS
TCSL
0
1
DI
BUSY
D0
X
0
X
Dx
READY
TWL
DO
0
1
TRI-STATE
STANDBY
Guarantee at Vcc = +4.5V to +6.0V.
相关PDF资料 |
PDF描述 |
|---|---|
| 93LC56-SL | 1K/2K/4K 2.0V Microwire Serial EEPROM |
| 93LC56-SM | 1K/2K/4K 2.0V Microwire Serial EEPROM |
| 93LC56-SN | 1K/2K/4K 2.0V Microwire Serial EEPROM |
| 93LC56AMS | 2K Microwire Compatible Serial EEPROM |
| 93LC56AP | 2K Microwire Compatible Serial EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC56-SL | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM |
| 93LC56-SM | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM |
| 93LC56-SN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM |
| 93LC56T | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K/2K/4K 2.5V Microwire Serial EEPROM |
| 93LC56T/SN | 功能描述:电可擦除可编程只读存储器 256x8-128x16 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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