参数资料
型号: 93LC56B-E/MCG
元件分类: PROM
英文描述: 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8
文件页数: 3/38页
文件大小: 703K
代理商: 93LC56B-E/MCG
2005 Microchip Technology Inc.
DS21929A-page 11
93XX46X/56X/66X/76X/86X
3.4
ERASE
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. CS is brought
low following the loading of the last address bit. This
falling edge of the CS pin initiates the self-timed
programming cycle, except on ‘93CXX’ devices where
the rising edge of CLK before the last address bit ini-
tiates the write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
FIGURE 3-1:
ERASE TIMING FOR 93AAXX AND 93LCXX DEVICES
FIGURE 3-2:
ERASE TIMING FOR 93CXX DEVICES
Note:
After the Erase cycle is complete, issuing
a Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1
AN-2
A0
TSV
TCZ
BUSY
Ready
High-Z
TWC
High-Z
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1
AN-2
A0
TSV
TCZ
Busy
Ready
High-Z
TWC
High-Z
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