参数资料
型号: 93LC66-I/P
厂商: Microchip Technology
文件页数: 2/20页
文件大小: 0K
描述: IC EEPROM 4KBIT 2MHZ 8DIP
标准包装: 60
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K(512 x 8 或 256 x 16)
速度: 1MHz,2MHz
接口: Microwire 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
93LC46/56/66
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V SS ........................................................................................................ -0.6V to V CC + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
ESD protection on all pins ......................................................................................................................................................≥ 4 kV
? NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC C HARACTERISTICS
DC CHARACTERISTICS
V CC = +2.5V to +5.5V
Industrial (I): T A = -40°C to +85°C
Param.
No.
D1
D2
D3
D4
D5
D6
D7
Sym
V IH 1
V IH 2
V IL 1
V IL 2
V OL 1
V OL 2
V OH 1
V OH 2
I LI
I LO
C IN ,
Characteristic
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
Min
2.0
0.7 V CC
-0.3
-0.3
2.4
V CC -0.2
Typ
Max
V CC +1
V CC +1
0.8
0.2 V CC
0.4
0.3
±10
±10
7
Units
V
V
V
V
V
V
V
V
μ A
μ A
pF
Conditions
V CC ≥ 2.7V
V CC ≥ 2.7V
V CC ≥ 2.7V
V CC ≥ 2.7V
I OL = 2.1 mA, V CC = 4.5V
I OL = 100 μ A, V CC = 2.5V
I OL = 400 μ A, V CC = 4.5V
I OL = 100 μ A, V CC = 2.5V
V IN = 0.1V to V CC
V OUT = 0.1V to V CC
V IN /V OUT = 0V (Note 1 & 2)
C OUT
(all inputs/outputs)
T A = 25°C, F CLK = 1 MHz
D8
I CC write Operating current
3
mA
F CLK = 2 MHz, V CC = 5.5V
(Note 2)
D9
I CC read
100
1
500
mA
μ A
μ A
F CLK = 2 MHz, V CC = 5.5V
F CLK = 1 MHz, V CC = 3.0V
F CLK = 1 MHz, V CC = 2.5V
D10
I CCS
Standby current
3
100
30
μ A
μ A
μ A
CLK = CS = 0V; V CC = 5.5V
CLK = CS = 0V; V CC = 3.0V
CLK = CS = 0V; V CC = 2.5V
ORG, DI = V SS or V CC
Note 1:
2:
This parameter is tested at T A = 25°C and F CLK = 1 MHz.
This parameter is periodically sampled and not 100% tested.
DS21712B-page 2
? 2004 Microchip Technology Inc.
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