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| 型号： | 93LC66B-TI/MS |
| 元件分类： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | LEAD FREE, PLASTIC, MO-187, MSOP-8 |
| 文件页数： | 10/38页 |
| 文件大小： | 703K |
| 代理商： | 93LC66B-TI/MS |
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93XX46X/56X/66X/76X/86X
DS21929A-page 18
2005 Microchip Technology Inc.
4.5
Organization (ORG)
When the ORG pin is connected to VCC or Logic HI, the
(x16) memory organization is selected. When the ORG
pin is tied to VSS or Logic LO, the (x8) memory
organization is selected. For proper operation, ORG
must be tied to a valid logic level.
For devices without the ORG functionality, there is no
internal connection to the ORG pin. In these devices
the functionality has been set at the factory to support
a single word size.
‘A’ series devices – x8 organization
‘B’ series devices – x16 organization
4.6
Program Enable (PE)
A logic level on the PE pin will enable or disable the
ability to write data to the memory array in only the 8-
lead 93XX76C and 93XX86C devices. For all other
devices the PE function is not present and the PE pin
is a no connect. When driving the PE pin to a logic
High, the device can be programmed, but when the PE
pin is driven Low, programming is inhibited. This pin is
used in parallel with the EWEN/EWDS latch to protect
the memory array from inadvertent writes, as shown in
In either the 93XX76C or 93XX86C devices, the PE pin
must be tied to a specific logic level and cannot be
floated. In all other devices without the PE function, the
PE pin has no internal connections and programming is
always enabled.
TABLE 4-2:
WRITE PROTECTION SCHEME
EWEN/EWDS Latch
PE Pin*
Array WRITE
Enabled
1
Yes
Disabled
1
No
Enabled
0
No
Disabled
0
No
* PE pin level does not alter the state of the EWEN/EWDS latch.
Note:
For logic control, the PE pin must be driven high before the Chip Select enables the device and must
remain high until the Chip Select is disabled.
相关PDF资料 |
PDF描述 |
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| 93LC66B-TI/OTG | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93LC66B-TI/OT | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93LC46A-TE/OT | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93LC46B-I/PGX | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
| 93LC46B-TI/MCX | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC66BX/SN | 功能描述:电可擦除可编程只读存储器 256x16 Rot Pin RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BX-E/SN | 功能描述:电可擦除可编程只读存储器 256x16 Rot Pin RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BX-E/SNG | 功能描述:电可擦除可编程只读存储器 256x16 Rot Pin Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BX-I/SN | 功能描述:电可擦除可编程只读存储器 256x16 Rot Pin RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC66BX-I/SNG | 功能描述:电可擦除可编程只读存储器 256x16 Rot Pin Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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