参数资料
型号: 93LC76C-E/SN
厂商: Microchip Technology
文件页数: 7/36页
文件大小: 0K
描述: IC EEPROM 8KBIT 3MHZ 8SOIC
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K(1K x 8 或 512 x 16)
速度: 2MHz,3MHz
接口: Microwire 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
2.6
Erase/Write Disable and Enable
Once the EWEN instruction is executed, programming
(EWDS/EWEN)
The 93XX76A/B/C powers up in the Erase/Write
Disable ( EWDS ) state. All programming modes must be
preceded by an Erase/Write Enable ( EWEN ) instruction.
remains enabled until an EWDS instruction is executed
or V CC is removed from the device.
To protect against accidental data disturbance, the
EWDS instruction can be used to disable all erase/write
functions and should follow all programming opera-
tions. Execution of a READ instruction is independent of
both the EWEN and EWDS instructions.
FIGURE 2-3:
EWDS TIMING
T CSL
CS
CLK
DI
1
0
0
0
0
x
???
x
FIGURE 2-4:
EWEN TIMING
T CSL
CS
CLK
DI
1
0
0
1
1
x
???
x
2.7
Read
The output data bits will toggle on the rising edge of the
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string.
CLK and are stable after the specified time delay (T PD ).
Sequential read is possible when CS is held high. The
memory data will automatically cycle to the next register
and output sequentially.
FIGURE 2-5:
CS
CLK
READ TIMING
DI
1
1
0
A N
???
A0
DO
High-Z
0
Dx
???
D0
Dx
???
D0
Dx
???
D0
? 2003-2012 Microchip Technology Inc.
DS21796M-page 7
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