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参数资料
| 型号： | 93LC86C-E/MSG |
| 元件分类： | PROM |
| 英文描述： | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | ROHS COMPLIANT, PLASTIC, MSOP-8 |
| 文件页数： | 28/30页 |
| 文件大小： | 520K |
| 代理商： | 93LC86C-E/MSG |
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2008 Microchip Technology Inc.
DS21797J-page 7
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
2.4
Erase
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. The rising
edge of CLK before the last address bit initiates the
write cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
FIGURE 2-1:
ERASE TIMING
2.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed. The
rising edge of CLK before the last data bit initiates the
write cycle. Clocking of the CLK pin is not necessary
after the device has entered the ERAL cycle.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL).
VCC must be
≥4.5V for proper operation of ERAL.
FIGURE 2-2:
ERAL TIMING
Note:
After the Erase cycle is complete, issuing
a Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
TCSL
Check Status
11
1
AN
AN-1
AN-2
A0
TSV
TCZ
Busy
Ready
High-Z
TWC
High-Z
Note:
After the ERAL command is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS
CLK
DI
DO
TCSL
Check Status
10
0
1
0
x
x
TSV
TCZ
Busy
Ready
High-Z
TEC
High-Z
相关PDF资料 |
PDF描述 |
|---|---|
| 93LC86C-I/SNG | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C86CT-I/SNG | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93AA86C-I/ST | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC86C-I/MS | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C86C-I/STG | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC86C-I/MS | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 2.5V IND TEMP, MSOP8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC86C-I/MSG | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC86C-I/P | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 2.5V IND TEMP, PDIP8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC86C-I/P | 制造商:Microchip Technology Inc 功能描述:IC EEPROM SERIAL 16K 93LC86 DIP8 |
| 93LC86C-I/PG | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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