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参数资料
| 型号： | 93LC86C-TI/MC |
| 元件分类： | PROM |
| 英文描述： | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8 |
| 文件页数： | 8/38页 |
| 文件大小： | 703K |
| 代理商： | 93LC86C-TI/MC |
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93XX46X/56X/66X/76X/86X
DS21929A-page 16
2005 Microchip Technology Inc.
3.9
WRITE ALL (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AAXX and 93LCXX devices, after the last data
bit is clocked into DI, the falling edge of CS initiates the
self-timed auto-erase and programming cycle. For
93CXX devices, the self-timed auto-erase and pro-
gramming cycle is initiated by the rising edge of CLK on
the last data bit. Clocking of the CLK pin is not neces-
sary after the device has entered the WRAL cycle. The
WRAL command does include an automatic ERAL
cycle for the device. Therefore, the WRAL instruction
does not require an ERAL instruction, but the chip must
be in the EWEN status.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
VCC must be
≥ 4.5V for proper operation of WRAL.
FIGURE 3-10:
WRAL TIMING FOR 93AAXX AND 93LCXX DEVICES
FIGURE 3-11:
WRAL TIMING FOR 93CXX DEVICES
Note:
For devices with PE functionality such as
the 93XX76C or 93XX86C, the write
sequence requires a logic low signal on
the PE pin prior to the rising edge of the
last data bit.
Note:
After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
High-Z
Busy
Ready
TWL
VCC must be
≥ 4.5V for proper operation of WRAL.
TCSL
TSV
TCZ
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
High-Z
Busy
Ready
TWL
TCSL
TSV
TCZ
相关PDF资料 |
PDF描述 |
|---|---|
| 93LC66A-TI/OT | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93LC46A-TE/MC | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC46A-TI/OT | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93LC46B-TE/STG | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C46A-I/MCGX | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93LC86-I/P | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 IND TEMP, PDIP8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC86-I/SN | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 IND TEMP, SOIC8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC86-I/SN | 制造商:Microchip Technology Inc 功能描述:EEPROM SERIAL 16K 93LC86 SOIC8 |
| 93LC86T/SN | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 SOIC8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 93LC86T-I/SN | 功能描述:电可擦除可编程只读存储器 1024x16-2048x8 IND TEMP SOIC8 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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