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参数资料
| 型号： | 93LCS56-I/SM |
| 元件分类： | PROM |
| 英文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.207 INCH, PLASTIC, SOIC-8 |
| 文件页数： | 9/14页 |
| 文件大小： | 182K |
| 代理商： | 93LCS56-I/SM |
93LCS56/66
DS11181E-page 4
2004 Microchip Technology Inc.
2.0
FUNCTIONAL DESCRIPTION
The 93LCS56/66 is organized as 128/256 registers by
16 bits. Instructions, addresses and write data are
clocked into the DI pin on the rising edge of the clock
(CLK). The DO pin is normally held in a high-Z state
except when reading data from the device, or when
checking the ready/busy status during a programming
operation. The ready/busy status can be verified during
an Erase/Write operation by polling the DO pin; DO low
indicates that programming is still in progress, while
DO high indicates the device is ready. The DO will enter
the high-Z state on the falling edge of the CS.
2.1
START Condition
The START bit is detected by the device if CS and DI
are both HIGH with respect to the positive edge of CLK
for the first time.
Before a START condition is detected, CS, CLK, and DI
may change in any combination (except to that of a
START condition), without resulting in any device oper-
ation (READ, WRITE, ERASE, EWEN, EWDS, ERAL,
WRAL, PRREAD, PREN, PRCLEAR, PRWRITE, and
PRDS). As soon as CS is HIGH, the device is no longer
in the standby mode.
An instruction following a START condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction is clocked in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new start condition is
detected.
2.2
DI/DO
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the READ operation, if A0 is a logic
HIGH level. Under such a condition the voltage level
seen at Data Out is undefined and will depend upon the
relative impedances of Data Out and the signal source
driving A0. The higher the current sourcing capability of
A0, the higher the voltage at the Data Out pin.
2.3
Data Protection
During power-up, all programming modes of operation
are inhibited until VCC has reached a level greater than
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
VCC has fallen below 1.4V.
The EWEN and EWDS commands give additional pro-
tection against accidentally programming during nor-
mal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction
can be executed.
2.4
READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16 bit output string. The output
data bits will toggle on the rising edge of the CLK and
are stable after the specified time delay (TPD). Sequen-
tial read is possible when CS is held high. The memory
data will automatically cycle to the next register and
output sequentially.
2.5
Erase/Write Enable and Disable
(EWEN, EWDS)
The 93LCS56/66 powers up in the Erase/Write Disable
(EWDS) state. All programming modes must be pre-
ceded by an Erase/Write Enable (EWEN) instruction.
The PE pin MUST be held “high” while loading the
EWEN instruction. Once the EWEN instruction is exe-
cuted, programming remains enabled until an EWDS
instruction is executed or VCC is removed from the
device. To protect against accidental data disturb, the
EWDS instruction can be used to disable all Erase/
Write functions and should follow all programming
operations. Execution of a READ instruction is inde-
pendent of both the EWEN and EWDS instructions.
2.6
ERASE
The ERASE instruction forces all data bits of the spec-
ified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle. The PE pin MUST be latched “high” during load-
ing the ERASE instruction but becomes a “don't care”
after loading the instruction.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCLS). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction. ERASE
instruction is valid if specified address is unprotected.
The ERASE cycle takes 4 ms per word typical.
2.7
WRITE
The WRITE instruction is followed by 16 bits of data
which are written into the specified address. After the
last data bit is put on the DI pin, CS must be brought
low before the next rising edge of the CLK clock. Both
CS and CLK must be low to initiate the self-timed auto-
erase and programming cycle. The PE pin MUST be
latched “high” while loading the WRITE instruction but
becomes a “don't care” thereafter.
相关PDF资料 |
PDF描述 |
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| 93LCS66TI/SM | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
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| 93LCS66/SN | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
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