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参数资料
| 型号： | 93MT100KBS90PBF |
| 元件分类： | 晶闸管 |
| 英文描述： | 1000 V, SCR |
| 文件页数： | 2/9页 |
| 文件大小： | 111K |
| 代理商： | 93MT100KBS90PBF |
www.irf.com
53-93-113MT..KB Series
2
Bulletin I27503 08/97
53MT.KB
93MT.KB 113MT.KB
Parameter
52MT.KB
92MT.KB 112MT.KB Units Conditions
51MT.KB
91MT.KB 111MT.KB
I
O
Maximum DC output current
55
90
110
A
120° Rect conduction angle
@ Case temperature
85
°C
I
TSM
Maximum peak, one-cycle
390
950
1130
A
t = 10ms
No voltage
forward, non-repetitive
410
1000
1180
t = 8.3ms
reapplied
on state surge current
330
800
950
t = 10ms
100% V
RRM
345
840
1000
t = 8.3ms
reapplied
Initial
I2t
Maximum I2t for fusing
770
4525
6380
A2s
t = 10ms
No voltage
T
J = TJ max.
700
4130
5830
t = 8.3ms
reapplied
540
3200
4510
t = 10ms
100% V
RRM
500
2920
4120
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
7700
45250
63800
A2
√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
1.17
1.09
1.04
V
(16.7% x
π x I
T(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold
1.45
1.27
(I >
π x I
T(AV)), @ T J max.
voltage
rt1
Low level value on-state
12.40
4.10
3.93
m
(16.7% x
π x I
T(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2
High level value on-state
11.04
3.59
3.37
(I >
π x I
T(AV)), @ T J max.
slope resistance
V
TM
Maximum on-state voltage drop
2.68
1.65
1.57
V
Ipk = 150A, T
J
= 25°C
tp = 400s single junction
di/dt
Max. non-repetitive rate
150
A/s
TJ = 25
oC, from 0.67 V
DRM , ITM = π x IT(AV),
of rise of turned oncurrent
Ig = 500mA,tr< 0.5 s, tp > 6 s
I
H
Max. holding current
200
T
J
= 25oC, anode supply = 6V,
mA
resistive load, gate open circuit
IL
Max. latching current
400
TJ = 25oC, anode supply = 6V, resistive load
Forward Conduction
Voltage
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
/I
DRM
max.
Type number
Code
repetitive peak
non-repetitive peak
peak off-state voltage
@ T
J = 125°C
reverse voltage
gate open circuit
VV
V
mA
80
800
900
800
100
1000
1100
1000
53/52/51MT..KB
120
1200
1300
1200
10
140
1400
1500
1400
160
1600
1700
1600
80
800
900
800
93/92/91MT..KB
100
1000
1100
1000
113/112/111MT..KB
120
1200
1300
1200
20
140
1400
1500
1400
160
1600
1700
1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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PDF描述 |
|---|---|
| 91MT80KBS90PBF | 800 V, SCR |
| 93MT120KB | 1200 V, SCR |
| 92MT140KB | 1400 V, SCR |
| 91MT120KB | 1200 V, SCR |
| 92MT120KB | 1200 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 93MT100KPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
| 93MT100KS90PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
| 93MT120K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.2KV V(RRM)|90A I(T) |
| 93MT120KB | 功能描述:RECT BRIDGE 1200V 90A INT-A-PAK RoHS:否 类别:半导体模块 >> 桥式整流器 系列:- 标准包装:10 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):35A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:底座安装 封装/外壳:ISOTOP 包装:托盘 供应商设备封装:ISOTOP? |
| 93MT120KBS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THREE PHASE CONTROLLED BRIDGE |
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