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53-93-113MT..KB Series
3
Bulletin I27503 08/97
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
V
INS
RMS isolation voltage
4000
V
T
J
= 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt
Max. critical rate of rise
500
V/s
T
J
= T
J
max., linear to 0.67 V
DRM,
of off-state voltage (*)
gate open circuit
Blocking
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
P
GM
Max. peak gate power
10
W
T
J = TJ max.
P
G(AV)
Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GT
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
4.0
V
TJ = - 40°C
voltage to trigger
2.5
TJ = 25°C
Anode supply = 6V, resistive load
1.7
TJ = 125°C
I
GT
Max. required DC gate
270
TJ = - 40°C
current to trigger
150
mA
TJ = 25°C
Anode supply = 6V, resistive load
80
TJ = 125°C
V
GD
Max. gate voltage
0.25
V
@ T
J = TJ max., ratedVDRMapplied
that will not trigger
I
GD
Max. gate current
6
mA
that will not trigger
Thermal and Mechanical Specifications
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
T
J
Max. junction operating
-40 to 125
°C
temperature range
T
stg
Max. storage temperature
-40 to 125
°C
range
R
thJC
Max. thermal resistance,
0.18
0.14
0.12
K/W
DC operation per module
junction to case
1.07
0.86
0.70
DC operation per junction
0.19
0.15
0.12
120° Rect condunction angle per module
1.17
0.91
0.74
120° Rect condunction angle per junction
R
thCS
Max. thermal resistance,
0.03
K/W
Per module
case to heatsink
Mounting surface smooth, flat an greased
T
Mounting
to heatsink
4 to 6
Nm
torque ± 10%
to terminal
3 to 4
wt
Approximate weight
225
g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.