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参数资料
| 型号： | 94A3L |
| 英文描述： | Two-Bit Phototransistors |
| 中文描述： | 双位光敏 |
| 文件页数： | 2/2页 |
| 文件大小： | 30K |
| 代理商： | 94A3L |
MID-94A3L
Optical-Electrical Characteristics
@ T
A
=25
o
C
Unit
Parameter
Test Conditions
I
c
=0.1mA
Ee=0
Symbol
V
(BR)CEO
Min.
Typ .
Max.
Collector-Emitter
30
V
Breakdown Voltage
Emitter-Collector
Ie=0.1mA
V
(BR)ECO
5
V
Breakdown Voltage
Ee=0
I
c
=0.5 mA
Ee=0.1mW/cm
2
V
R
=5V, R
L
=1K
I
C
=1mA
V
CE
=10V
Ee=0
V
CE
=5V
Ee=0.1mW/cm
2
Collector-Emitter
V
CE(SAT)
0.1
0.4
V
Saturation Voltage
Rise Time
Tr
10
μ
S
Fall Time
Tf
I
CEO
10
Collector Dark
100
nA
Current
On State Collector
I
C(ON)
0.16
0.4
mA
Current
Typical Optical-Electrical Characteristic Curves
02/04/2002
Unity Opto Technology Co., Ltd.
Ee - Irradiance - mW/cm
2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0.0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
0.6
Vce = 5 V
R
(
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75
-25
25
75
125
Vce = 5 V
Ee = 0.1
mW/cm
2
@
λ
= 940 nm
TA - Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
I
0.001
0.01
0.1
1
10
100
1000
0
40
80
120
TA - Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
I
μ
A
0
4
8
12
16
20
0
2
4
6
8
10
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
R
L
- Load Resistance - KW
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
T
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|---|---|
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