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参数资料
| 型号： | 98984 |
| 厂商： | IXYS Corporation |
| 英文描述： | HiPerFET Power MOSFETs Q-Class |
| 中文描述： | HiPerFET功率MOSFET调Q级 |
| 文件页数： | 1/2页 |
| 文件大小： | 92K |
| 代理商： | 98984 |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
550
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 M
550
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C
= 25
°C60
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
240
A
I
AR
T
C
= 25
°C60
A
E
AR
T
C
= 25
°C75
mJ
E
AS
T
C
= 25
°C
4.0
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/s, VDD ≤ VDSS,
20
V/ns
T
J
≤ 150°C, R
G = 2
P
D
T
C
= 25
°C
735
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
6
g
TO-264
10
g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g, low trr
Features
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 3mA
550
V
V
GS(th)
V
DS
= V
GS, ID = 8 mA
2.0
4.5
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±200
nA
I
DSS
V
DS
= V
DSS
T
J =
25
°C50 A
V
GS
= 0 V
T
J = 125°C2
mA
R
DS(on)
V
GS
= 10 V, I
D = 0.5 ID25
88 m
Pulse test, t
≤ 300 s, duty cycle d ≤ 2 %
G = Gate
D = Drain
S = Source
TAB = Drain
DS98984(12/02)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
=
550 V
I
D25
=
60 A
R
DS(on)
=
88 m
t
rr ≤
≤≤≤≤ 250 ns
IXFK 60N55Q2
IXFX 60N55Q2
PLUS 247TM (IXFX)
G
D
D (TAB)
Advanced Technical Information
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