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参数资料
| 型号： | 9AF40R |
| 元件分类： | 整流器 |
| 英文描述： | 50 A, 400 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 2/4页 |
| 文件大小： | 133K |
| 代理商： | 9AF40R |
9AF.. Series
2
Preliminary Data Sheet I20263 rev. C 07/99
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max
VV
mA
9AF40
400
500
10
9AF60
600
700
10
ELECTRICALSPECIFICATIONS
Voltage Ratings
IF(AV) Max. average forward current
50
A
180° conduction, half sine wave
@ Case temperature
150
°C
I
F(RMS) Max. peak repetitive forward current
79
A
@ Case temperature
150
°C
I
FSM
Max. peak, one-cycle forward,
850
A
t = 10ms
No voltage
non-repetitive surge current
900
t = 8.3ms reapplied
750
t = 10ms
100% V
RRM
785
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
3977
A2s
t = 10ms
No voltage Initial TJ = TJ max.
3631
t = 8.3ms reapplied
2813
t = 10ms
100% VRRM
2568
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
39775
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage
0.72
V
TJ = 175°
VF(TO)2 High level value of threshold voltage
0.84
rf1
Low level value of forward slope resistance
3.29
m
rf2
High level value of forward slope resistance
2.67
V
FM
Maximum forward voltage drop
1.33
V
T
J = 25°C, I =
157 A
Parameter
9AF
Units Conditions
Forward Conduction
T
J
Max. junction operating temperature range
- 55 to 175
°C
Tstg
Storage temperature range
- 55 to 175
RthJC
Max. thermal resistance, junction to case
0.30
K/W
DC operation
RthCS
Max. thermal resistance, case to heatsink
0.14
As per mounting details
wt
Approximate weight
6
g
Parameter
9AF
Units Conditions
Thermal and Mechanical Specifications
相关PDF资料 |
PDF描述 |
|---|---|
| 9AF40NPBF | 50 A, 400 V, SILICON, RECTIFIER DIODE |
| 9AF60N | 50 A, 600 V, SILICON, RECTIFIER DIODE |
| 9AF40N | 50 A, 400 V, SILICON, RECTIFIER DIODE |
| 9AF60RPBF | 50 A, 600 V, SILICON, RECTIFIER DIODE |
| 9AF60NPBF | 50 A, 600 V, SILICON, RECTIFIER DIODE |
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