参数资料
型号: A1190LLHLX-T
元件分类: 磁阻传感器
英文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, 1-20mT, RECTANGULAR, SURFACE MOUNT
封装: 2 X 3 MM, 1 MM HEIGHT, LEAD FREE, SOT-23, 3 PIN
文件页数: 3/18页
文件大小: 427K
代理商: A1190LLHLX-T
Programmable, Chopper-Stabilized,
Two Wire Hall-Effect Switches
A1190, A1192,
and A1193
11
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Try Mode In Try mode, bit field addressing is accomplished by
applying a series of VPM pulses to the VCC pin of the device, as
shown in figure 6. Each pulse increases the bit field value for the
selected parameter, increasing by one on the falling edge of each
additional VPM pulse. When addressing the bit field in Try mode,
the quantity of VPM pulses is represented by a decimal number
called the code. Addressing activates the corresponding fuse
locations in the given bit field by increasing the binary value of
an internal DAC, up to the maximum possible code. As the value
of the bit field code increases, the value of the programmable
parameter changes. Measurements can be taken after each VPM
pulse to determine if the required result for the programmable
parameter has been reached. Cycling the supply voltage resets
all the locations in the bit field that have un-blown fuses to their
initial states.
When setting the BOP Trim parameter, as an aid to programming,
values can be traversed from low to high, or from high to low. To
accommodate this direction selection, the value of the bit field
(and code) defaults to the value 1, on the falling edge of the final
register selection VPH pulse (see figure 5). A complete example is
provided in figure 11.
Blow Mode After the required code is determined for a given
parameter, its value can be set permanently by blowing individual
fuses in the appropriate register bit field. Blowing is accom-
plished by selecting the register, then the Blow mode selection
key, followed by the appropriate bit field address, and ending
the sequence with the Blow pulse. The Blow mode selection key
is a sequence of nine VPM pulses followed by one VPH pulse. A
complete example is provided in figure 12.
The Blow pulse consists of a VPH pulse of sufficient duration,
tBLOW, to permanently set an addressed bit by blowing a fuse
internal to the device. Due to power requirements, the fuse for
each bit in the bit field must be blown individually. The A119x
family built-in circuitry allows only one fuse at a time to be
blown. During Blow mode, the bit field can be considered a “one-
hot” shift register. Table 3 relates the quantity of VPM pulses to
the binary and decimal values for Blow mode bit field address-
ing. It should be noted that the simple relationship between the
quantity of VPM pulses and the corresponding code is:
2n = Code,
where n is the quantity of VPM pulses. The bit field has an initial
state of decimal code 0 (binary 000000).
Figure 6. Try mode bit field addressing pulses
Figure 7. Example of code 5 broken into its binary components
Supply
V
oltage,
V
CC
0
VPH
VPM
VPL
Code
2
Code
3
Code
2
n
2
Code
2
n
1
Table 3. Blow Mode Bit Field Addressing
Quantity of
VPM Pulses
Binary Register
Setting
Equivalent Code
1
000001
1
2
000010
2
3
000100
4
001000
8
5
010000
16
6
100000
32
(Decimal Equivalent)
Code 5
Bit Field Selection
Address Code Format
Code in Binary
Fuse Blowing
Target Bits
Fuse Blowing
Address Code Format
(Binary)
1 0 1
Bit 2
Bit 0
Code 4
Code 1
(Decimal Equivalents)
Supply
V
oltage,
V
CC
0
Key
VPH
VPM
VPL
Figure 5. Register selection pulse sequence
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