参数资料
型号: A1220ELHLX-T
元件分类: 磁阻传感器
英文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4mT, 30-60mA, RECTANGULAR, SURFACE MOUNT
封装: LEAD FREE, SOT-23W, 3 PIN
文件页数: 2/14页
文件大小: 290K
代理商: A1220ELHLX-T
Chopper Stabilized Precision Hall Effect Latches
A1220, A1221,
A1222, and A1223
10
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
CBYP
A122x
VOUT
GND
0.1 μF
VCC
Output
RL
VS
Operation
The output of these devices switches low (turns on) when a mag-
netic field perpendicular to the Hall element exceeds the operate
point threshold, BOP (see panel A of figure 1). After turn-on, the
output voltage is VOUT(SAT). The output transistor is capable of
sinking current up to the short circuit current limit, IOM, which is
a minimum of 30 mA. When the magnetic field is reduced below
the release point, BRP, the device output goes high (turns off).
The difference in the magnetic operate and release points is the
hysteresis, BHYS, of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external
mechanical vibration and electrical noise.
Removal of the magnetic field will leave the device output
latched on if the last crossed switchpoint is BOP, or latched off if
the last crossed switch point is BRP.
Powering-on the device in the hysteresis range (less than BOP and
higher than BRP) will give an indeterminate output state. The cor-
rect state is attained after the first excursion beyond BOP or BRP.
Applications
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to reduce both external noise
and noise generated by the chopper stabilization technique. As is
shown in panel B of figure 1, a 0.1 μF capacitor is typical.
Extensive applications information for Hall effect devices is
available in:
Hall-Effect IC Applications Guide, Application Note 27701
Guidelines for Designing Subassemblies Using Hall-Effect
Devices, Application Note 27703.1
Soldering Methods for Allegro’s Products – SMT and Through-
Hole, Application Note 26009
All are provided in Allegro Electronic Data Book, AMS-702, and
the Allegro Web site, www.allegromicro.com.
Figure 1. Switching behavior of latches. In panel A, on the horizontal axis, the B+ direction indicates increasing south polarity magnetic field strength,
and the B– direction indicates decreasing south polarity field strength (including the case of increasing north polarity). This behavior can be exhibited
when using a circuit such as that shown in panel B.
(A)
(B)
Functional Description
B
OP
B
RP
BHYS
VCC
V
OUT
VOUT(SAT)
Switch
to
Low
Switch
to
High
B+
B–
V+
0
相关PDF资料
PDF描述
A1223LUA-T MAGNETIC FIELD SENSOR-HALL EFFECT, -18-18mT, 30-60mA, RECTANGULAR, THROUGH HOLE MOUNT
A1221ELHLX-T MAGNETIC FIELD SENSOR-HALL EFFECT, -9-9mT, 30-60mA, RECTANGULAR, SURFACE MOUNT
A1223ELHLT-T MAGNETIC FIELD SENSOR-HALL EFFECT, -18-18mT, 30-60mA, RECTANGULAR, SURFACE MOUNT
A1222LLHLX-T MAGNETIC FIELD SENSOR-HALL EFFECT, -15-15mT, 30-60mA, RECTANGULAR, SURFACE MOUNT
A1223LLHLX-T MAGNETIC FIELD SENSOR-HALL EFFECT, -18-18mT, 30-60mA, RECTANGULAR, SURFACE MOUNT
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