参数资料
型号: A1393SEHLT-T
元件分类: 磁阻传感器
英文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, 3.1V, RECTANGULAR, SURFACE MOUNT
封装: 2 X 3 MM, 0.75 MM HEIGHT, LEAD FREE, DFN-6
文件页数: 11/15页
文件大小: 480K
代理商: A1393SEHLT-T
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
5
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
OUTPUT TIMING CHARACTERISTICS1
TA = 25°C
Characteristic
Symbol
Test Conditions
Min.
Typ.2
Max.
Units
Power-On Time3
tPON
–40
60
μs
Power-Off Time4
tPOFF
–1–
μs
1See figure 1 for explicit timing delays.
2Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
3Power-On Time is the elapsed time after the voltage on the SLEEP pin exceeds the active mode threshold voltage,VINH, until the time the device output
reaches 90% of its value.
4Power-Off Time is the duration of time between when the signal on the SLEEP pin switches from HIGH to LOW and when ICC drops to under 100 μA.
During this time period, the output goes into the HIGH impedance state.
MAGNETIC CHARACTERISTICS
TA = 25°C
Characteristic
Symbol
Test Conditions
Min.
Typ.*
Max.
Units
Ratiometry
VOUTQ(V)
100
%
Ratiometry
Sens(V)
100
%
Positive Linearity
Lin+
100
%
Negative Linearity
Lin–
100
%
Symmetry
Sym
100
%
*Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
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