参数资料
| 型号： | A14V40A-VQG100C |
| 厂商： | Microsemi SoC |
| 文件页数： | 9/90页 |
| 文件大小： | 0K |
| 描述： | IC FPGA 4K GATES 3.3V 100-VQFP |
| 产品变化通告： | A1440A Family Discontinuation 24/Jan/2012 |
| 标准包装： | 90 |
| 系列： | ACT™ 3 |
| LAB/CLB数： | 564 |
| 输入/输出数： | 83 |
| 门数： | 4000 |
| 电源电压： | 3 V ~ 3.6 V |
| 安装类型： | 表面贴装 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-TQFP |
| 供应商设备封装： | 100-VQFP（14x14） |
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Accelerator Series FPGAs – ACT 3 Family
R e visio n 3
2 -9
5 V Operating Conditions
Table 2-2 Absolute Maximum Ratings1, Free Air Temperature Range
Symbol
Parameter
Limits
Units
VCC
DC supply voltage
–0.5 to +7.0
V
VI
Input voltage
–0.5 to VCC + 0.5
V
VO
Output voltage
–0.5 to VCC + 0.5
V
IIO
I/O source sink current2
±20
mA
TSTG
Storage temperature
–65 to +150
°C
Notes:
1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Device should not be
operated outside the recommended operating conditions.
2. Device inputs are normally high impedance and draw extremely low current. However, when input voltage is greater
than VCC + 0.5 V for less than GND –0.5 V, the internal protection diodes will forward bias and can draw excessive
current.
Table 2-3 Recommended Operating Conditions
Parameter
Commercial
Industrial
Military
Units
Temperature range*
0 to +70
–40 to +85
–55 to +125
°C
5 V power supply tolerance
±5
±10
%VCC
Note:
*Ambient temperature (TA) is used for commercial and industrial; case temperature (TC) is used for military.
Table 2-4 Electrical Specifications
Symbol
Parameter
Test Condition
Commercial
Industrial
Military
Units
Min.
Max.
Min.
Max.
Min.
Max.
VOH1,2 High level output
IOH = –4 mA (CMOS)
–
3.7
–
3.7
–
V
IOH = –6 mA (CMOS)
3.84
V
IOH = –10 mA (TTL)3
2.40
V
VOL1,2 Low level output
IOL = +6 mA (CMOS)
0.33
0.4
V
IOL = +12 mA (TTL)3
0.50
VIH
High level input
TTL inputs
2.0
VCC + 0.3 2.0
VCC + 0.3
2.0 VCC + 0.3
V
VIL
Low level input
TTL inputs
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIN
Input leakage
VI = VCC or GND
–10
+10
–10
+10
–10
+10
A
IOZ
3-state output leakage VO = VCC or GND
–10
+10
–10
+10
–10
+10
A
CIO
I/O capacitance3,4
10
pF
ICC(S)
Standby VCC supply current (typical = 0.7 mA)
2
10
20
mA
ICC(D) Dynamic VCC supply current. See the Power Dissipation section.
Notes:
1. Microsemi devices can drive and receive either CMOS or TTL signal levels. No assignment of I/Os as TTL or CMOS is
required.
2. Tested one output at a time, VCC = minimum.
3. Not tested; for information only.
4. VOUT = 0 V, f = 1 MHz
5. Typical standby current = 0.7 mA. All outputs unloaded. All inputs = VCC or GND.
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