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参数资料
| 型号： | A150N50X4E |
| 厂商： | ANAREN INC |
| 元件分类： | 终端器 |
| 英文描述： | 0 MHz - 2700 MHz 50 ohm RF/MICROWAVE TERMINATION |
| 封装： | ROHS COMPLIANT PACKAGE-1 |
| 文件页数： | 1/2页 |
| 文件大小： | 87K |
| 代理商： | A150N50X4E |
USA/Canada:
Toll Free:
Europe
:
(315) 432-8909
(800) 544-2414
+44 2392-232392
Model A150N50X4E
Features:
RoHS Compliant
150 Watts
DC – 3.0 GHz
AlN Ceramic
Non-Nichrome Resistive
Element
Low VSWR
100% Tested
Description
The A150N50X4E is high performance Aluminum Nitride (AlN) chip
termination intended as a cost competitive alternative to Beryllium Oxide
(BeO). The termination is well suited to all cellular frequency bands such
as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling
makes the part ideal for terminating circulators and for use in power
combiners. The termination is also RoHS compliant!
General Specifications
Resistive Element
Thick film
Substrate
AlN Ceramic
Terminal Finish
Matte Tin over Nickel Barrier
Operating Temperature
-50 to +200
°C (see de rating chart)
Tolerance is
±0.010”, unless otherwise specified. Designed to meet of exceed
applicable portions of MIL-E-5400. All dimensions in inches.
Electrical Specifications
Resistance Value:
50 Ohms,
± 2%
Power:
150 Watts
Frequency Range:
DC –3.0 GHz
Return Loss
25dB DC – 2.0 GHz
20dB DC – 3.0 GHz
Specification based on unit properly installed using suggested mounting instructions
and a 50 ohm nominal impedance. Specifications subject to change.
Outline Drawing
UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES
1 of 2
Chip Termination
150 Watts, 50
Ω
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