3134
LOW-HYSTERESIS
BIPOLAR HALL-EFFECT SWITCH
FOR HIGH-TEMP. OPERATION
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
APPLICATIONS INFORMATION
Hall effect applications information is available in the “Hall-Effect IC
Applications Guide” (AN 27701), which can be found in the latest issue of
Allegro MicroSystems Electronic Data Book
, AMS-702, or at
www.allegromicro.com
OPERATION
The output of these devices (pin 3) switches low when the magnetic field
at the Hall sensor exceeds the operate point threshold (B
OP
). At this point, the
output voltage is V
OUT(SAT)
. When the magnetic field is reduced to below the
release point (B
RP
) the device output goes high. Note especially that release
can occur when the magnetic field is removed but to ensure release, a field
reversal is required. The difference in the magnetic operate and release points
is called the hysteresis (B
hys
) of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external mechanical
vibration and electrical noise.
Suffix “UA”
SENSOR LOCATIONS
(
±
0.005" [0.13 mm] die placement)
1
3
2
Dwg. MH-011-4B
0.018"
0.46 mm
NOM
BRANDED
SURFACE
ACTIVE AREA DEPTH
0.083"
2.10 mm
0.060"
1.51 mm
A
Suffix “U”
1
3
2
Dwg. MH-002-7B
0.015"
0.38 mm
NOM
BRANDED
SURFACE
ACTIVE AREA DEPTH
0.077"
1.96 mm
0.092"
2.33 mm
A
Suffix “LT”
1
3
2
Dwg. MH-008-4B
0.030"
0.76 mm
NOM
ACTIVE AREA DEPTH
0.050"
1.27 mm
0.090"
2.27 mm
A