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| 型号： | A3935KLQTR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 6/13页 |
| 文件大小： | 0K |
| 描述： | IC CTLR MOSFET 3PH AUTO 36-SOIC |
| 产品变化通告： | A3935KLQTR-T Obsolescence 24/Oct/2011 |
| 标准包装： | 1 |
| 应用： | DC 电机驱动器，无刷（BLDC），3 相 |
| 输出数： | 1 |
| 电压 - 负载： | 7 V ~ 40 V |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 135°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 36-QSOP |
| 供应商设备封装： | 36-QSOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1140 (CN2011-ZH PDF) |
| 其它名称： | 620-1292-6 |
A3935
3-Phase Power MOSFET Controller for Automotive Applications
ELECTRICAL CHARACTERISTICS (continued) at T J = –40°C to 150°C, V BAT = 7 to 16 V, V DD = 4.75 to 5.25 V,
ENABLE = 22.5 kHz, 50% duty cycle, tw o phases active;unless otherwise noted
Characteristics
VBAT Overvoltage Gain Constant
VBAT Undervoltage
VBAT Undervoltage Hysteresis
VREG Undervoltage
VDSTH Input Range
VDSTH Input Current
Short–to–Ground Threshold
Symbol
K BAT(ov)
V BAT(uv)
V BAT(uv)
V REG(uv)
V DSTH
I DSTH
V STG(th)
Conditions
V BAT(ov) = (K BAT(ov) x V SET(ov) ) + V BAT(ov) (0);
V BAT(ov)(0) at V SET(ov) = 0
Decreasing V BAT
Percent of V BAT(uv)
Decreasing V REG
V DSTH > 0.8 V
With a high–side driver on, as V SX decreases,
V DRAIN – V S x > V STG causes a fault
Min.
–
5.0
8.0
9.9
0.5
40
V DSTH –
0.3
Typ 1 .
12
5.25
–
–
–
–
–
Max.
–
5.5
12
11.1
3.0
100
V DSTH +
0.2
Units
V/V
V
%
V
V
μ A
V
Short–to–Battery Threshold V STB(th)
With a low–side driver on, as V SX increases,
V S x – V LSS > V STB causes a fault
V DSTH –
0.3
–
V DSTH +
0.2
V
VDRAIN-Open Bridge Operating Range V DRAIN
7 V < V BAT < 40 V –0.3 –
V BAT +
2.0
V
VDRAIN - Open Bridge Current I VDRAIN
7 V < V BAT < 40 V 0 – 1.0 mA
VDRAIN /Open Bridge Threshold Voltage V BDGO(th) If V DRAIN < V BDGOTH then a bridge fault occurs 1.0 – 3.0 V
Thermal Shut Down Temperature T J
160 170 180 °C
Thermal Shutdown Hysteresis
? T J
7.0 10 13 °C
1 Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary for individual
units, within the specified maximum and minimum limits.
2 Negative current is defined as coming out of (sourcing) the specified device terminal.
3 For V BOOSTM < V BOOST < 40 V power dissipation in the V REG LDO increases. Observe T J < 150°C limit.
4 With V BOOST decreasing, dropout voltage measured at V REG = V REG(ref) – 200 mV where V REG(ref) = V REG at V BOOST = 16 V.
5 For GH x : V SDU = V C x – V GH x , V DSL = V GH x – V S x , V DSL(H) = V C x – V SDU – V S x .
6 For GL x : V SDU = V REG – V GL x , V DSL = V GL x – V LSS , V DSL(H) = V REG – V SDU – V LSS.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
6
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