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| 型号： | A3979SLPTR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 5/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MICROSTEPPING 28-TSSOP |
| 标准包装： | 1 |
| 应用： | 步进电机驱动器 |
| 输出数： | 1 |
| 电流 - 输出： | ±2.5A |
| 电压 - 负载： | 8 V ~ 35 V |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -20°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.173"，4.40mm 宽）裸露焊盘 |
| 供应商设备封装： | 28-TSSOP 裸露焊盘 |
| 包装： | 标准包装 |
| 产品目录页面： | 1140 (CN2011-ZH PDF) |
| 其它名称： | 620-1148-6 |
A3979
DMOS Microstepping Driver with Translator
ELECTRICAL CHARACTERISTICS, continued at T A = 25°C, V BB = 35 V, V DD = 3.0 to 5.5 V (unless otherwise noted)
Characteristics
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Symbol Test Conditions
T JSD
T JSDHYS
Min.
–
–
Typ. 1
165
15
Max.
–
–
Units
°C
°C
UVLO Enable Threshold
UVLO Hysteresis
V UVLO
V UVLOHYS
Increasing V DD
2.45
0.05
2.7
0.10
2.95
–
V
V
1 Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary for
individual units, within the specified maximum and minimum limits.
2 Negative current is defined as coming out of (sourcing from) the specified device pin.
3 E
G = ( [ V REF / 8] – V SENSE ) / ( V REF / 8 ).
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
Characteristic
Package Thermal Resistance
Symbol
R θ JA
Test Conditions*
Two-layer PCB with 3.8 in. 2 of copper area on each side
connected with thermal vias and to device exposed pad
High-K PCB (multilayer with significant copper areas,
based on JEDEC standard)
Value
32
28
Units
oC/W
oC/W
*Additional thermal information available on Allegro Web site.
Maximum Power Dissipation, P D(max)
5.0
4.5
(R i -
θ J
= PCB
oC
rP
(R C w
θ J ith
3 8
32 . in 2
/W c p
oC
4.0
3.5
3.0
2.5
2.0
1.5
2-
La
ye /W
H
gh
A
B
A =
K
28
)
)
op
er
p
er
sid
e
1.0
0.5
0.0
20
40
60
80 100 120
140
160
Temperature (°C)
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
5
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