参数资料
型号: A3PE600-1PQG208I
厂商: Microsemi SoC
文件页数: 120/162页
文件大小: 0K
描述: IC FPGA 600000 GATES 208-PQFP
标准包装: 24
系列: ProASIC3E
RAM 位总计: 110592
输入/输出数: 147
门数: 600000
电源电压: 1.425 V ~ 1.575 V
安装类型: 表面贴装
工作温度: -40°C ~ 85°C
封装/外壳: 208-BFQFP
供应商设备封装: 208-PQFP(28x28)
ProASIC3E DC and Switching Characteristics
2-46
Revision 13
SSTL3 Class I
Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). ProASIC3E devices support
Class I. This provides a differential amplifier input buffer and a push-pull output buffer.
Timing Characteristics
Table 2-72 Minimum and Maximum DC Input and Output Levels
SSTL3 Class I
VIL
VIH
VOL
VOH
IOL IOH
IOSL
IOSH
IIL IIH
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmA mA
Max.
mA1
Max.
mA1
A2 A2
14 mA
–0.3 VREF – 0.2 VREF + 0.2
3.6
0.7
VCCI – 1.1 14 14
54
51
10 10
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
Figure 2-20 AC Loading
Table 2-73 AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
Input High (V)
Measuring
Point* (V)
VREF (typ.) (V)
VTT (typ.) (V)
CLOAD (pF)
VREF – 0.2
VREF + 0.2
1.5
1.485
30
Note: *Measuring point = Vtrip. See Table 2-15 on page 2-18 for a complete table of trip points.
Test Point
30 pF
50
25
SSTL3
Class I
VTT
Table 2-74 SSTL3 Class I
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 3.0 V, VREF = 1.5 V
Speed
Grade
tDOUT
tDP
tDIN
tPY
tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS
Units
Std.
0.66
2.31
0.04
1.25
0.43
2.35
1.84
4.59
4.07
ns
–1
0.56
1.96
0.04
1.06
0.36
2.00
1.56
3.90
3.46
ns
–2
0.49
1.72
0.03
0.93
0.32
1.75
1.37
3.42
3.04
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.
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