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参数资料
| 型号： | A8498SLJTR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK ADJ 3A 8SOIC |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.8 V ~ 24 V |
| 输入电压： | 8 V ~ 50 V |
| PWM 型： | 电流模式 |
| 电流 - 输出： | 3A |
| 同步整流器： | 无 |
| 工作温度： | -20°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | 8-SOIC-EP |
| 产品目录页面： | 1142 (CN2011-ZH PDF) |
| 其它名称： | 620-1160-6 |
A8498
Wide Input Voltage 3.0 A Step Down Regulator
RTSET Selection. Correct selection of RTSET values will
ensure that minimum on time of the switcher is not violated and
prevent the switcher from cycle skipping. For a given V IN to
V OUT ratio, the RTSET value must be greater than or equal to the
value defined by the curve in the plot below.
Note. The curve represents the minimum RTSET value. When
calculating R TSET , be sure to use V IN (max) / V OUT (min). Resistor
13.0
12.5
12.0
tolerance should also be considered, so that under no operating
conditions the resistance on the TSET pin is allowed to go below
the minimum value.
FB Resistor Selection. The impedance of the FB network
should be kept low to improve noise immunity. Large value resis-
tors can pick up noise generated by the inductor, which can affect
voltage regulation of the switcher.
11.5
11.0
10.5
10.0
Violation of
Minimum On-Time
um
in
lu
ET
R
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
M
im
Va
e
TS
of
Safe Operating Area
5.0
4.5
4.0
3.5
3.0
2.5
2.0
R TSET (k )
Recommended Components
Component
V IN = 42 V
(Through Hole)
V IN = 24 V
(SMD)
V IN = 12 V
(SMD)
Description Part Number
Description
Part Number
Description
Part Number
Inductor
Sumida, 68 μ H
RCH1216BNP-680K 47 μ H, 53 m Ω , 3.9 A, ±20%
CDRH127/LDNP-470MC
33 μ H, 53 m Ω , 3.9 A,
±20%
CDRH127/LDNP-330MC
NIEC Schottky
Diode
Barrier, 60 V,
NSQ03A06
Schottky, 30V, 3A, SMA
B330
Schottky, 20 V, 3 A, SMA
B320
TO-252AA
CBOOT
CIN1
CIN2
COUT
Ceramic X7A,
0.01 μ F, 100 V
Ceramic X7A,
0.22 μ F, 50 V
Rubycon ZL,
220 μ F, 50 V
Rubycon ZL,
220 μ F, 25 V
Generic
Generic
50-ZL-220-M-10 X 16
25-ZL-220-M-8 X 11.5
Ceramic, X7R, ±10%,
0.01 μ F / 50 V
Ceramic, X7R, ±10%,
0.1 μ F / 50 V
Aluminum electrolytic,
35 V / 82 μ F, 930 mA
ripple current
Aluminum electrolytic ,
6.3 V / 330 μ F, 450 mA
ripple current
C0603C103K5RACTU
(Kemet)
GRM188R71H104KA93D
(Murata)
35V-ZAV-820-8 X 12 (two)
EEVFC0J331P (Panasonic)
Ceramic, X7R, ±10%,
0.01 μ F / 50 V
Ceramic, X7R, ±10%,
0.1 μ F / 50 V
Aluminum electrolytic,
35 V / 82 μ F, 930 mA
ripple current
Aluminum electrolytic,
6.3 V / 330 μ F, 450 mA
ripple current
C0603C103K5RACTU
(Kemet)
GRM188R71H104KA93D
(Murata)
35V-ZAV-820-8 X 12
(two)
EEVFC0J331P
(Panasonic)
2.55 k Ω at VOUT = 1.8 V
2.55 k Ω at VOUT = 1.8 V
2.55 k Ω at VOUT = 1.8 V
R1
R2
R TSET
6.34 k Ω at VOUT = 3.3 V
10.5 k Ω at VOUT = 5.0 V
2 k Ω
63.4 k Ω
6.34 k Ω at VOUT = 3.3 V
10.5 k Ω at VOUT = 5.0 V
2 k Ω
47.5 k Ω
6.34 k Ω at VOUT = 3.3 V
10.5 k Ω at VOUT = 5.0 V
2 k Ω
35.2 k Ω
Allegro MicroSystems, LLC
115 Northeast Cutoff
7
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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