参数资料
型号: A8511KLPTR-T
厂商: Allegro Microsystems Inc
文件页数: 18/24页
文件大小: 0K
描述: IC LED DVR 150MA AUTO 28-TSSOP
标准包装: 1
拓扑: PWM,升压(升压)
输出数: 4
内部驱动器:
类型 - 主要: 车载,背光
类型 - 次要: 高亮度 LED(HBLED),RGB,白色 LED
频率: 600kHz ~ 2.1MHz
电源电压: 8 V ~ 21 V
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.173",4.40mm 宽)裸露焊盘
供应商设备封装: 28-TSSOP 裸露焊盘
包装: 标准包装
工作温度: -40°C ~ 125°C
其它名称: 620-1367-6
A8511
2 MHz, 4 Channel×150 mA WLED/RGB Driver
With Output Disconnect
The following equation can be used to determine the resistance
for setting the OVP level:
esis (V UVLO(th) + V UVLO(hys) ), the A8511 is enabled. It is disabled
when V IN falls below V UVLO(th) for more than 50 μ s. This lag
R OVP = (V OVP – 19.5) / 200 μ A ,
(3)
is to avoid shutting down because of momentary glitches in the
power supply.
where V OVP is the target typical OVP level, and R OVP is the value
of the external resistor, in Ω .
A8511 has secondary overvoltage protection to protect internal
switches in the event of an open diode condition. Open Schottky
diode detection is implemented by detecting overvoltage on the
SW pin. If voltage on the SW pin exceeds the device safe operat-
ing voltage rating, the A8511 disables and remains latched. The
IC must shut down before it can be reenabled.
Overcurrent Protection The boost switch is protected with
pulse-by-pulse current limiting at 3.6 A. The output disconnect
switch protects against output overcurrent. At 1.35 A typical, the
A8511 disables. This process is detailed in the Disconnect Switch
Overcurrent Fault Timing diagram in the Performance Character-
istics section, page 14.
In some instances, when the LEDs are connected by long wires
Input OVLO When V IN rises above V OVLO(th) for more than
50 μ s, the A8511 is disabled, the boost converter shuts down
instantly, and LED current falls gradually with the CAP pin
capacitor. When V IN falls below V OVLO(th) and EN is high, the
device is reenabled.
Thermal Derating Thermal derating can be achieved by con-
necting an NTC thermistor between VTI and ground, as shown
in figure 5. When the A8511 is enabled and V TI > 1.1 V, 100%
current for the LEDs is controlled by the ISET and DIM pins.
When V TI falls below 1.1 V, V ISET starts to follow V TI , result-
ing in I LEDX varying proportionately with V TI represented by the
overlap of the dotted and solid curves. The proportion of I LED
to V TI , when LED current is controlled through the VTI pin, is
calculated as:
and also some output capacitance (such as ESD capacitors) is
present, a clamping diode on the output must be used. This diode
I ILEDx = 960 × V TI / R ISET ,
(4)
will prevent the output from momentarily going negative during
a short circuit condition. The diode must be chosen such that its
reverse breakdown voltage is higher than normal operating volt-
age and its reverse current leakage is small. Please refer to the
application note Output Diode Clamping for the A8511 for more
details.
Input UVLO When V IN rises above the UVLO enable hyster-
V OVP
where I LEDx is the LEDx pin current in mA, and R ISET is in k Ω .
There is a hysteresis built into the VTI pin circuit, so while V TI is
decreasing, there is a delay before proportional change begins if
VTI pin voltage starts above 1.1 V. When V TI starts below 1.1 V,
or falls below 1.1 V during operation and then starts increasing
again V ISET will follow V TI until the voltage reaches 1.23 V.
I LED
VTO
2.46 V
÷2
1.23 V
C2
C1
RVC
NTC
–t°
VTI
Minimum
Select
LED Current
Reference
ISET
t
RISET
A8511
Symbol
C1
C2
t
Parameter
V OVP
I LED
time
Units/Division
10 V
50 mA
100 μ s
Figure 4. Output overvoltage protection (OVP) operation
Figure 5. Thermal derating reference circuit
8511-DS
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
18
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