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| 型号： | A8732EEETR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 6/21页 |
| 文件大小： | 0K |
| 描述： | IC PHOTOFLASH CAP CHARGER 8DFN |
| 标准包装： | 1 |
| 应用： | 照相机闪光灯电容器充电器，Xenon |
| 电流 - 电源： | 50µA |
| 电源电压： | 1.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN/MLP（2x2） |
| 包装： | 标准包装 |
| 其它名称： | 620-1338-6 |
A8732
Ultra Small Mobile Phone Xenon Photoflash
Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS (Continued) Typical values are valid at V IN = V BAT = 3.6 V; T A = 25°C, except
specifications guaranteed from ? 40°C to 85°C ambient, unless otherwise noted
indicates
Switch On-Resistance
Switch Leakage Current
CHARGE Pull-down Resistance
CHARGE Input Voltage
R SWDS(on)
I SWLK
R CHGPD
V CHARGE
V IN_DRV = 3.6 V, I D = 600 mA, T A = 25°C
V SW = 5.5, over full temperature range
(note 1)
High, over input supply range (note 1)
Low, over input supply range (note 1)
–
–
–
1.0
–
0.4
–
100
–
–
–
2
–
–
0.4
Ω
μ A
k Ω
V
V
Charge Pin Programming
ILIM Programming High at CHARGE Pin
ILIM Programming Low at CHARGE Pin
Total ILIM Setup Time at CHARGE Pin
Switch-Off Timeout
Switch-On Timeout
Output Comparator Trip Voltage
Output Comparator Voltage Overdrive
ˉDˉ ˉOˉ ˉNˉ ˉEˉ Leakage Current
ˉDˉ ˉOˉ ˉNˉ ˉEˉ Output Low Voltage
dV/dt Threshold for ZVS Comparator
t ILIM(H)init
t ILIM(H)
t ILIM(L)
t ILIM(SU)
t off(max)
t on(max)
V OUTTRIP
V OUTOV
I DONELK
V DONEL
dV/dt
Initial Pulse (note 3)
Subsequent Pulses (note 3)
(note 3)
(note 3)
Measured as V SW – V BAT (note 4)
Pulse width = 200 ns (90% to 90%)
(note 1)
32 μ A into ˉDˉ ˉOˉ ˉNˉ ˉEˉ pin (note 1)
Measured at SW pin
15
0.2
0.2
–
–
–
31
–
–
–
–
–
–
200
18
18
31.5
200
–
20
–
–
–
–
–
–
32
400
1
100
–
μ s
μ s
μ s
μ s
μ s
μ s
V
mV
μ A
mV
V/ μ s
IGBT Driver
TRIG Input Voltage
TRIG Pull-Down Resistor
GATE Resistance to VIN_DRV
GATE Resistance to GND
Propagation Delay (Rising)
Propagation Delay (Falling)
Output Rise Time
Output Fall Time
GATE Pull-Down Resistor
V TRIG(H)
V TRIG(L)
R TRIGPD
R SrcDS(on)
R SnkDS(on)
t Dr
t Df
t r
t f
R GTPD
Input = logic high, over input supply range
(note 1)
Input = logic low, over input supply range
(note 1)
V GATE = 1.8 V
V GATE = 1.8 V
Measurement taken at GATE pin,
C L = 6500 pF (notes 3, 5)
(notes 3, 5)
(notes 3, 5)
(notes 3, 5)
1.0
–
–
–
–
–
–
–
–
–
–
–
100
21
27
25
60
290
380
20
–
0.4
–
–
–
–
–
–
–
–
V
V
k Ω
Ω
Ω
ns
ns
ns
ns
k Ω
1 Specifications throughout the range T A = –40°C to 85°C guaranteed by design and characterization.
2 Current limit guaranteed by design and correlation to static test.
3 Guaranteed by design and characterization.
4 Specifications throughout the range T A = –20°C to 85°C guaranteed by design and characterization.
5 See IGBT Drive Timing Definition diagram for further information.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
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