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| 型号： | A8735EEETR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC PHOTOFLASH CAP CHARGER 8DFN |
| 标准包装： | 1 |
| 应用： | 照相机闪光灯电容器充电器，Xenon |
| 电流 - 电源： | 50µA |
| 电源电压： | 1.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN/MLP（2x2） |
| 包装： | 标准包装 |
| 其它名称： | 620-1339-6 |
A8735
Ultra Small Mobile Phone Xenon Photoflash
Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS Typical values are valid at V IN = V BAT = 3.6 V; T A = 25°C, except
guaranteed from ? 40°C to 85°C ambient, unless otherwise noted
indicates specifications
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VBAT Voltage
Range 1
V BAT
1.5
–
5.5
V
VIN_DRV Voltage Range 1
V IN
2.3
–
5.5
V
UVLO Enable Threshold
UVLO Hysteresis
V IN Supply Current
VBAT Pin Supply Current
V INUV
V INUV(hys)
I IN
I BAT
V IN rising
Shutdown (CHARGE = 0 V, TRIG = 0 V)
Charging complete
Charging (CHARGE = V IN , TRIG = 0 V)
Shutdown (CHARGE = 0 V, TRIG = 0 V)
Charging done (CHARGE = V IN ,
ˉDˉ ˉOˉ ˉNˉ ˉEˉ = 0 V)
Charging (CHARGE = V IN , TRIG = 0 V)
–
–
–
–
–
–
–
–
2.05
150
0.02
50
2
0.01
–
–
2.2
–
0.5
100
–
1
5
50
V
mV
μ A
μ A
mA
μ A
μ A
μ A
Current Limit
Primary-Side Current Limit 2
I SWLIM
0.9
1.0
1.1
A
Switch On-Resistance
Switch Leakage Current 1
CHARGE Input Current
CHARGE Input Voltage 1
CHARGE On/Off Delay
Switch-Off Timeout
Switch-On Timeout
Output Comparator Trip Voltage 3
Output Comparator Voltage Overdrive
R SWDS(on)
I SWLK
I CHARGE
V CHARGE
t CH
t off(max)
t on(max)
V OUTTRIP
V OUTOV
V IN_DRV = 3.6 V, I D = 600 mA, T A = 25°C
V SW = 5.5, over full temperature range
V CHARGE = V IN
High, over input supply range
Low, over input supply range
Time between CHARGE = 1 and charging
enabled
Measured as V SW – V BAT
Pulse width = 200 ns (90% to 90%)
–
–
–
1.0
–
–
–
–
31.0
–
0.4
–
36
–
–
20
18
18
31.5
200
–
2
–
–
0.4
–
–
–
32.0
400
Ω
μ A
μ A
V
V
us
μ s
μ s
V
mV
ˉDˉ ˉOˉ ˉNˉ ˉEˉ Output Leakage Current 1
I DONELK
1
μ A
ˉDˉ ˉOˉ ˉNˉ ˉEˉ Output Low
Voltage 1
V DONEL
32 μ A into ˉDˉ ˉOˉ ˉNˉ ˉEˉ pin
–
–
100
mV
dV/dt Threshold for ZVS Comparator
dV/dt
Measured at SW pin
–
20
–
V/ μ s
IGBT Driver
TRIG Input Voltage 1
TRIG Pull-Down Resistor
GATE Resistance to VIN_DRV
GATE Resistance to GND
Propagation Delay (Rising) 4,5
Propagation Delay (Falling) 4,5
V TRIG(H)
V TRIG(L)
R TRIGPD
R SrcDS(on)
R SnkDS(on)
t Dr
t Df
Input = logic high, over input supply range
Input = logic low, over input supply range
V GATE = 1.8 V
V GATE = 1.8 V
Measurement taken at ˉDˉ ˉOˉ ˉNˉ ˉEˉ pin,
C L = 6500 pF
1
–
–
–
–
–
–
–
–
100
21
27
25
60
–
0.4
–
–
–
–
–
V
V
k Ω
Ω
Ω
ns
ns
Output Rise
Time 4,5
t r
–
290
–
ns
Output Fall Time 4,5
GATE Pull-Down Resistor
t f
R GTPD
–
–
380
20
–
–
ns
k Ω
1 Specifications throughout the range T A = –40°C to 85°C guaranteed by design and characterization.
2 Current limit guaranteed by design and correlation to static test.
3 Specifications throughout the range T A = –20°C to 85°C guaranteed by design and characterization.
4 Guaranteed by design and characterization.
5 See IGBT Drive Timing Definition diagram for further information.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4
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