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| 型号： | A8739EEETR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 6/23页 |
| 文件大小： | 0K |
| 描述： | IC PHOTOFLASH CHARGER 8-DFN |
| 标准包装： | 1 |
| 应用： | 照相机闪光灯电容器充电器，Xenon |
| 电流 - 电源： | 2mA |
| 电源电压： | 2.3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（2x2） |
| 包装： | 标准包装 |
| 其它名称： | 620-1365-6 |
A8739
Ultra-Small Mobile Adjustable Xenon Photoflash
Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS (Continued) Typical values are valid at V IN = V BAT = 3.6 V; T A = 25°C, except
specifications guaranteed from ? 40°C to 85° C ambient, unless otherwise noted
Charge Pin Programming
indicates
ILIM Programming High at CHARGE pin 2
ILIM Programming Low at CHARGE pin 2
Total ILIM Setup Time at CHARGE pin 2
Switch-Off Timeout
Switch-On Timeout
Output Comparator Trip Voltage
ˉDˉ ˉOˉ ˉNˉ ˉEˉ Leakage Current 2
t ILIM(H)init
t ILIM(H)
t ILIM(L)
t ILIM(SU)
t off(max)
t on(max)
V OUTTRIP1
V OUTTRIP2
V OUTTRIP3
V OUTTRIP4
V OUTTRIP5
I DONELK
Initial Pulse
Subsequent Pulses
Measured as V SW – V BAT (R BAT = 0 Ω )
Measured as V SW – V BAT (R BAT = 845 Ω )
Measured as V SW – V BAT (R BAT = 2.32 k Ω )
Measured as V SW – V BAT (R BAT = 4.87 k Ω )
Measured as V SW – V BAT (R BAT = 9.09 k Ω )
15
0.2
0.2
–
–
–
31
–
–
–
–
–
–
–
–
200
18
18
31.5
31.0
30.5
30.0
29.5
–
–
–
–
–
–
–
32
–
–
–
–
1
μ s
μ s
μ s
μ s
μ s
μ s
V
V
V
V
V
μ A
Output Low
Voltage 2
V DONEL
32 μ A into ˉDˉ ˉOˉ ˉNˉ ˉEˉ pin
–
–
100
mV
Output Voltage Overdrive
dV/dt Threshold for ZVS Comparator
V OUTOV
dV/dt
Pulse width = 200 ns (90% to 90%)
Measured at SW pin
–
–
200
20
400
–
mV
V/ μ s
IGBT Driver
TRIG Input Voltage 2
TRIG Pull-Down Resistor
GATE Resistance to VIN_DRV
GATE Resistance to GND
Propagation Delay (Rising) 3
Propagation Delay (Falling) 3
V TRIG(H)
V TRIG(L)
R TRIGPD
R SrcDS(on)
R SnkDS(on)
t Dr
t Df
Input = logic high, over input supply range
Input = logic low, over input supply range
V GATE = 1.8 V
V GATE = 1.8 V
Measurement taken at GATE pin,
C L = 6500 pF
1
–
–
–
–
–
–
–
–
100
21
27
25
60
–
0.4
–
–
–
–
–
V
V
k Ω
Ω
Ω
ns
ns
Output Rise
Time 3
t r
–
290
–
ns
Output Fall Time 3
GATE Pull-Down Resistor
t f
R GTPD
–
–
380
20
–
–
ns
k Ω
1 Current
limit guaranteed by design and correlation to static test.
2 Specifications throughout the range T A = –40°C to 85°C guaranteed by design and characterization.
3 See IGBT Drive Timing Definition diagram for further information.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
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