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参数资料
| 型号： | AA028P2-00 |
| 厂商： | SKYWORKS SOLUTIONS INC |
| 元件分类： | 放大器 |
| 英文描述： | 27000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | DIE |
| 文件页数： | 1/3页 |
| 文件大小： | 473K |
| 代理商： | AA028P2-00 |
Skyworks Solutions, Inc. [781] 376-3000
Fax [781] 376-3100 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 11/02A
27–31 GHz GaAs MMIC
Driver Amplifier
Features
■ Single Bias Supply Operation (6 V)
■ 14 dB Typical Small Signal Gain
■ 16 dBm Typical P1 dB Output Power
at 28 GHz
■ 0.25 m Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028P2-00
Description
Skyworks’ two-stage reactively-matched 27–31 GHz GaAs
MMIC driver amplifier has typical small signal gain of
14 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip
uses Skyworks’ proven 0.25
m MESFET technology, and
is based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductive epoxy die
attach process. All chips are screened for gain, output
power and S-parameters prior to shipment for guaranteed
performance. Designed for 27–31 GHz LMDS and digital
radio bands.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
80
110
mA
Small Signal Gain
F = 27–31 GHz
G
12
14
dB
Input Return Loss
F = 27–31 GHz
RLI
-11
-6
dB
Output Return Loss
F = 27–31 GHz
RLO
-12
-6
dB
Output Power at 1 dB Gain Compression
F = 28 GHz
P1 dB
13
16
dBm
Saturated Output Power
F = 28 GHz
PSAT
14
17
dBm
Two-Tone Output Third-Order Intercept1
F = 28 GHz
OIP3
26.5
dBm
Thermal Resistance2
ΘJC
198
°C/W
Electrical Specifications at 25°C (VDS = 6 V)
0.000
0.617
2.180
1.380
0.450
1.313
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
16 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
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