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参数资料
| 型号： | AA035P2-00 |
| 英文描述： | Microwave/Millimeter Wave Amplifier |
| 中文描述： | 微波/毫米波放大器 |
| 文件页数： | 1/3页 |
| 文件大小： | 173K |
| 代理商： | AA035P2-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 7/00A
1
28–36 GHz GaAs MMIC
Low Noise Amplifier
Features
I
Dual Bias Supply Operation (4.5 V)
I
2.8 dB Typical Noise Figure at 32 GHz
I
12 dB Typical Small Signal Gain
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF, DC and Noise Figure
Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Description
Alpha’s two-stage balanced 28–36 GHz MMIC low noise
amplifier has typical small signal gain of 12 dB with a
typical noise figure of 2.6 dB at 32 GHz. The chip uses
Alpha’s proven 0.25
μ
m low noise PHEMT technology, and
is based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductive epoxy die
attach process.
Chip Outline
AA035N1-00, AA035N2-00
Parameter
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
Min.
Typ.
3
70
12
2.8
-17
-20
10
50
Max.
90
Unit
mA
dB
dB
dB
dB
dBm
°C/W
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal Resistance
2
F = 28–36 GHz
F = 32 GHz
F = 28–36 GHz
F = 28–36 GHz
F = 35 GHz
10
3.2
-12
-12
AA035N1-00 Electrical Specifications at 25°C (V
DS
= 4.5 V, I
D
= 70 mA)
Parameter
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
Min.
Typ.
3
70
12
3.0
-17
-20
10
50
Max.
90
Unit
mA
dB
dB
dB
dB
dBm
°C/W
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal Resistance
2
F = 28–36 GHz
F = 32 GHz
F = 28–36 GHz
F = 28–36 GHz
F = 35 GHz
9
3.8
-12
-12
AA035N2-00 Electrical Specifications at 25°C (V
DS
= 4.5 V, I
D
= 70 mA)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.
0
0.000
0
0.116
0
0
1
1
2
2
2
1.598
2.370
2.255
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AA035P3-00 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:31-35 GHz GaAs MMIC Driver Amplifier |
| AA038H1-14 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwave/Millimeter Wave Amplifier |
| AA038N1-00 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:28-40 GHz GaAs MMIC Low Noise Amplifier |
| AA038N1-99 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:26-41 GHz Low Noise Amplifier |
| AA038N1-A2 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:26-40 GHz Surface Mount Low Noise Amplifier |
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