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参数资料
| 型号： | AA038P5-00 |
| 元件分类： | 放大器 |
| 英文描述： | 37000 MHz - 39000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | CHIP |
| 文件页数： | 1/2页 |
| 文件大小： | 129K |
| 代理商： | AA038P5-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 8/00A
37–39 GHz GaAs MMIC
Power Amplifier
Features
s Single Bias Supply Operation (5.5 V)
s 18 dB Typical Small Signal Gain
s 19 dBm Typical P1 dB Output Power
at 39 GHz
s 0.25
m Ti/Pd/Au Gates
s 100% On-Wafer RF and DC Testing
s 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA038P5-00
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB
associated gain over the band 37–39 GHz. The chip uses
Alpha’s proven 0.25
m MESFET technology, and is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate an epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where power and gain are required.
Parameter
Condition
Symbol
Min.
Typ.
Max.
Unit
Drain Current (at Saturation)
IDS
200
370
mA
Small Signal Gain
F = 37–39 GHz
G
16
18
dB
Input Return Loss
F = 37–39 GHz
RLI
-13
-10
dB
Output Return Loss
F = 37–39 GHz
RLO
-20
-10
dB
Output Power at 1 dB Gain Compression
F = 39 GHz
P1 dB
16
19
dBm
Saturated Output Power
F = 39 GHz
PSAT
19
21
dBm
Gain at Saturation
F = 39 GHz
GSAT
15
dB
Thermal Resistance1
ΘJC
51
°C/W
Electrical Specifications at 25°C (VDS = 5.5 V)
1. Calculated value based on measurement of discrete FET.
0.000
1.230
1.700
3.400
2.989
2.166
1.342
0.112
0.470
1.588
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
19 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
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