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参数资料
| 型号： | ABA-31563-TR2G |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | LEAD FREE, ULTRA MINIATURE, SOT-363, 6 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 283K |
| 代理商： | ABA-31563-TR2G |
2
ABA-31563 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25°C)
V
6
P
in
CW RF Input Power (Vcc = 3V)
dBm
15
P
diss
Total Power Dissipation[3]
W
0.3
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 2.3 mW/°C for Tc > 120.8°C.
Electrical Specifications T
c = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp[1]
Power Gain (|S
21|
2
)
dB
20.0
21.5
Gp
Power Gain Flatness,
f = 0.1 ~ 2.5 GHz
dB
0.2
f = 0.1 ~ 3.5 GHz
1.3
NF[1]
Noise Figure
dB
3.8
4.8
P1dB[1]
Output Power at 1dB Gain Compression
dBm
2.2
OIP3[1]
Output Third Order Intercept Point
dBm
13.1
VSWR
in
[1]
Input VSWR
<1.5
VSWR
out
[1]
Output VSWR
<1.5
Icc[1]
Device Current
mA
14
16
Td[1]
Group Delay
ps
140
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
Figure 1. ABA-31563 Production Test Circuit.
Thermal Resistance[2] (Vcc = 3V)
θ
j-c = 125°C/W
RF Output
RF Input
Vcc
RFC
33 nH
Cblock
1 nF
Cblock
1 nF
1Kx
Cbypass
100 pF
Cbypass
1000 pF
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