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参数资料
| 型号： | ABA-52563-BLK |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | ULTRA MINI, SC-70, SOT-363, 6 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 740K |
| 代理商： | ABA-52563-BLK |
2
ABA-52563 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Max.
Vcc
Device Voltage, RF output to ground (T = 25°C)
V
+7
Pin
CW RF Input Power (Vcc = 5V)
dBm
+20
Pdiss
Total Power Dissipation[3]
W
0.4
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp[1]
Power Gain (|S21|2)
dB
20
21.5
0.2
Gp
Power Gain Flatness, f = 0.1 ~ 2.5 GHz
dB
0.5
f = 0.1 ~ 3.5 GHz
2.1
NF[1]
Noise Figure
dB
3.3
4
0.12
P1dB[1]
Output Power at 1dB Gain Compression
dBm
9.8
0.15
OIP3[1]
Output Third Order Intercept Point
dBm
19.9
0.18
VSWRin[1]
Input VSWR
1.2
VSWRout[1]
Output VSWR
1.4
Icc[1]
Device Current
mA
35
43
0.5
td[1]
Group Delay
ps
150
Notes:
1. Measurements taken on 50
Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
Figure 1. ABA-52563 Production Test Circuit.
Thermal Resistance[2] (Vcc = 5V):
θjc = 106°C/W
Notes:
1. Operation of this device in excess of any of
theselimitsmaycausepermanentdamage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
RF Output
RF Input
Vcc
RFC
Cblock
Cbypass
2Hx
相关PDF资料 |
PDF描述 |
|---|---|
| ABA-52563-TR1 | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ABA-52563-TR2 | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ABA-52563-TR1G | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ABA-52563-TR2G | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ABA-53563-BLK | 0 MHz - 3500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ABA-52563-BLKG | 功能描述:射频放大器 DC - 3.5 GHz 21.5dB RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| ABA-52563-G | 制造商:Avago Technologies 功能描述:ABA-52563-BLK;3 |
| ABA-52563-TR1 | 功能描述:IC AMP RFIC 3.5GHZ 5V SOT-363 RoHS:否 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| ABA-52563-TR1G | 功能描述:射频放大器 DC - 3.5 GHz 21.5dB RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| ABA-52563-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:3.5 GHz Broadband Silicon RFIC Amplifier |
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