参数资料
型号: ABA-53563
英文描述: Low Noise Broadband Silicon RFIC Amplifier
中文描述: 宽带硅低噪声射频放大器
文件页数: 2/8页
文件大小: 105K
代理商: ABA-53563
2
ABA-52563 Absolute Maximum Ratings
[1]
Symbol
Parameter
Units
Absolute Maximum
V
cc
Device Voltage, RF output to ground
V
+8
P
in
CW RF Input Power (Vcc = 5V)
dBm
+20
θ
jc
Thermal Resistance
[2]
°
C/W
106
P
diss
Total Power Dissipation
[3]
W
0.5
T
j
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150
°
C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25
°
C. Derate 5.2 mW/
°
C for Tb
> 96.7
°
C.
Electrical Specifications
T
c
= +25
°
C, Z
o
= 50
, P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp
[1]
Power Gain (|S
21
|)
dB
20
21.5
0.2
Gp
Power Gain Flatness, f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
dB
0.5
2.0
NF
[1]
Noise Figure
dB
3.3
4
0.12
P1dB
[1]
Output Power at 1dB Gain Compression
dBm
9.8
0.15
OIP3
[1]
Output Third Order Intercept Point
dBm
19.9
0.18
VSWR
in[1]
Input VSWR
1.2
VSWR
out[1]
Output VSWR
1.4
Icc
[1]
Device Current
mA
35
0.5
td
[1]
Group Delay
ps
150
Notes:
1. Measurements taken on 50
test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Figure 1. ABA-52563 Production Test Circuit.
RF Output
RF Input
Vcc
RFC
C
block
C
block
C
bypass
2
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