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参数资料
| 型号： | ACS758KCB-150B-PFF-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 16/22页 |
| 文件大小： | 0K |
| 描述： | SENSOR CURRENT 150A 5V BI 5-CB |
| 标准包装： | 1,632 |
| 电流 - 感应： | ±150A |
| 精确度： | ±1% |
| 灵敏度： | 13.3mV/A |
| 电流 - 电源： | 10mA |
| 传感器类型： | 霍尔效应 |
| 电源电压： | 3 V ~ 5.5 V |
| 输出： | 2.5V |
| 频率： | 120kHz |
| 响应时间： | 4µs |
| 电极标记： | 双向 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 5-CB 成形引线 |
| 包装： | 管件 |
| 产品目录页面： | 1140 (CN2011-ZH PDF) |
| 其它名称： | 620-1322 |
ACS758xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
Linear Current Sensor IC with 100 μ Ω Current Conductor
Characteristic Definitions
Definitions of Accuracy Characteristics
Sensitivity (Sens). The change in device output in response to a
1 A change through the primary conductor. The sensitivity is the
The ratiometric change (%) in the quiescent voltage output is
defined as:
product of the magnetic circuit sensitivity (G / A) and the linear
IC amplifier gain (mV/G). The linear IC amplifier gain is pro-
V IOUTQ(
V)
=
V IOUTQ(V CC ) V IOUTQ(5V)
V CC 5V
%
grammed at the factory to optimize the sensitivity (mV/A) for the
half-scale current of the device.
and the ratiometric change (%) in sensitivity is defined as:
Noise (V NOISE ). The noise floor is derived from the thermal and
shot noise observed in Hall elements. Dividing the noise (mV)
Sens (
V
=
Sens (V CC
V CC
Sens (
5V
V
%
by the sensitivity (mV/A) provides the smallest current that the
device is able to resolve.
Nonlinearity (E LIN ). The degree to which the voltage output
from the IC varies in direct proportion to the primary current
through its half-scale amplitude. Nonlinearity in the output can be
attributed to the saturation of the flux concentrator approaching
the half-scale current. The following equation is used to derive
Quiescent output voltage (V IOUT(Q) ). Quiescent output voltage
(V IOUT(Q) ). The output of the device when the primary current is
zero. For bidirectional devices, it nominally remains at V CC ? 2.
Thus, V CC = 5 V translates into V IOUT(QBI) = 2.5 V. For unidirec-
tional devices, it nominally remains at 0.12 × V CC . Thus, V CC
= 5 V translates into V IOUT(QUNI) = 0.6 V. Variation in V IOUT(Q)
can be attributed to the resolution of the Allegro linear IC quies-
cent voltage trim, magnetic hysteresis, and thermal drift.
{ [
Δ gain × % sat ( V IOUT _half-scale amperes – V IOUT(Q) )
the linearity:
100 1–
where
2 ( V IOUT _quarter-scale amperes – V IOUT(Q) )
[{
Electrical offset voltage (V OE ). The deviation of the device out-
put from its ideal quiescent value of V CC ? 2 for bidirectional and
0.1 × V CC for unidirectional devices, due to nonmagnetic causes.
Magnetic offset error (I ERROM ). The magnetic offset is due to
the residual magnetism (remnant field) of the core material. The
V IOUT(Q) – V IOUT _–half-scale amperes
? ?
? gain = the gain variation as a function of temperature
changes from 25oC,
% sat = the percentage of saturation of the flux concentra-
tor, which becomes significant as the current being sampled
approaches half-scale ±I P , and
V IOUT_half-scale amperes = the output voltage (V) when the
sampled current approximates half-scale ±I P .
Symmetry (E SYM ). The degree to which the absolute voltage
output from the IC varies in proportion to either a positive or
negative half-scale primary current. The following equation is
used to derive symmetry:
V IOUT _+ half-scale amperes – V IOUT(Q )
100
Ratiometry. The device features a ratiometric output. This
means that the quiescent voltage output, V IOUTQ , and the mag-
netic sensitivity, Sens, are proportional to the supply voltage, V CC .
magnetic offset error is highest when the magnetic circuit has
been saturated, usually when the device has been subjected to a
full-scale or high-current overload condition. The magnetic offset
is largely dependent on the material used as a flux concentrator.
The larger magnetic offsets are observed at the lower operating
temperatures.
Total Output Error (E TOT ). The maximum deviation of the
actual output from its ideal value, also referred to as accuracy ,
illustrated graphically in the output voltage versus current chart
on the following page.
E TOT is divided into four areas:
?? 0 A at 25°C. Accuracy at the zero current flow at 25°C, with-
out the effects of temperature.
?? 0 A over Δ temperature. Accuracy at the zero current flow
including temperature effects.
?? Half-scale current at 25°C. Accuracy at the the half-scale current
at 25°C, without the effects of temperature.
?? Half-scale current over Δ temperature. Accuracy at the half-
scale current flow including temperature effects.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
16
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| ACS758KCB-150B-PSS-T | 功能描述:SENSOR CURRENT 150A 5V BI 5-CB RoHS:是 类别:传感器，转换器 >> 电流 系列:- 标准包装:10 系列:* |
| ACS758KCB-150U-PFF-T | 功能描述:IC SENSOR CURRENT 150A UNI 3-CB RoHS:是 类别:传感器，转换器 >> 电流 系列:- 标准包装:10 系列:* |
| ACS758LCB-050B-PFF-T | 功能描述:SENSOR CURRENT 50A 5V BI 5-CB RoHS:是 类别:传感器，转换器 >> 电流 系列:- 标准包装:10 系列:* |
| ACS758LCB-050B-PFF-T | 制造商:Allegro MicroSystems 功能描述:Hall Effect IC |
| ACS758LCB-050U-PFF-T | 功能描述:IC SENSOR CURRENT 50A UNI 3-CB RoHS:是 类别:传感器，转换器 >> 电流 系列:- 标准包装:10 系列:* |
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