参数资料
型号: ACS758LCB-100B-PFF-T
厂商: Allegro Microsystems Inc
文件页数: 6/22页
文件大小: 0K
描述: SENSOR CURRENT 100A 5V BI 5-CB
标准包装: 1,632
电流 - 感应: ±100A
精确度: ±1%
灵敏度: 20mV/A
电流 - 电源: 10mA
传感器类型: 霍尔效应
电源电压: 3 V ~ 5.5 V
输出: 2.5V
频率: 120kHz
响应时间: 4µs
电极标记: 双向
工作温度: -40°C ~ 150°C
封装/外壳: 5-CB 成形引线
包装: 管件
产品目录页面: 1140 (CN2011-ZH PDF)
其它名称: 620-1321
ACS758xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
Linear Current Sensor IC with 100 μ Ω Current Conductor
COMMON OPERATING CHARACTERISTICS 1 valid at T OP = –40°C to 150°C and V CC = 5 V, unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Supply
Voltage 2
V CC
3
5.0
5.5
V
Supply Current
Power-On Delay
Rise Time 3
I CC
t POD
t r
Output open
T A = 25°C
I P step = 60% of I P +, 10% to 90% rise time, T A = 25°C,
C OUT = 0.47 nF
10
10
3
13.5
mA
μ s
μ s
Propagation Delay
Time 3
t PROP
T A = 25°C, C OUT = 0.47 nF
1
μ s
Response Time
Internal Bandwidth 4
Output Load Resistance
Output Load Capacitance
Primary Conductor Resistance
Symmetry 3
Quiescent Output Voltage 5
Ratiometry 3
t RESPONSE
BW i
R LOAD(MIN)
C LOAD(MAX)
R PRIMARY
E SYM
V IOUT(QBI)
V IOUT(QUNI)
V RAT
Measured as sum of t PROP and t r
–3 dB; T A = 25°C, C OUT = 0.47 nF
VIOUT to GND
VIOUT to GND
T A = 25°C
Over half-scale of Ip
Bidirectional variant, I P = 0 A, T A = 25°C
Unidirectional variant, I P = 0 A, T A = 25°C, V IOUT(QUNI) is
ratiometric to V CC
V CC = 4.5 to 5.5 V
4.7
99
4
120
100
100
V CC /2
0.6
100
10
101
μ s
kHz
k Ω
nF
μΩ
%
V
V
%
1 Device
is factory-trimmed at 5 V, for optimal accuracy.
2 Devices are programmed for maximum accuracy at 5.0 V V CC levels. The device contains ratiometry circuits that accurately alter the 0 A Output Volt-
age and Sensitivity level of the device in proportion to the applied V CC level. However, as a result of minor nonlinearities in the ratiometry circuit ad-
ditional output error will result when V CC varies from the 5 V V CC level. Customers that plan to operate the device from a 3.3 V regulated supply should
contact their local Allegro sales representative regarding expected device accuracy levels under these bias conditions.
3 See Characteristic Definitions section of this datasheet.
4 Calculated using the formula BW i = 0.35 / t r .
5 V IOUT(Q) may drift over the lifetime of the device by as much as ±25 mV.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
6
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