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参数资料
| 型号： | ACST8-8CG |
| 厂商： | 意法半导体 |
| 英文描述： | OVER VOLTAGE PROTECTED AC POWER SWITCH |
| 中文描述： | 过压保护AC电源开关 |
| 文件页数： | 2/10页 |
| 文件大小： | 126K |
| 代理商： | ACST8-8CG |
ACST8
2/10
Table 2: Absolute Ratings
(limiting values)
Symbol
Note 1:
according to test described by IEC61000-4-5 standard & figure A.
Table 3: Gate Characteristics
(maximum values)
Symbol
P
G (AV)
Average gate power dissipation
P
GM
Peak gate power dissipation (t
p
= 20μs)
I
GM
Peak gate current (t
p
= 20μs)
Table 4: Thermal Resistance
Symbol
Table 5: Parameter Description
Parameter Symbol
I
GT
V
GT
V
GD
I
H
I
L
V
TM
V
T0
R
d
I
DRM
/
I
RRM
dV/dt
(dI/dt)c
V
CL
Parameter
Value
8
Unit
I
T(RMS)
RMS on-state current full cycle sine
wave 50 to 60 Hz
TO-220FPAB
TO-220AB /
D
2
PAK
Tcase = 90°C
A
Tcase = 100°C
8
I
TSM
Non repetitive surge peak on-state current
T
j
initial = 25°C, full cycle sine wave
Thermal constraint for fuse selection
Non repetitive on-state current critical rate of rise
I
G
= 10mA (t
r
< 100ns)
Non repetitive line peak pulse voltage
Storage temperature range
Operating junction temperature range
Maximum lead soldering temperature during 10s
t
p
= 20ms
t
p
= 16.7ms
tp = 10ms
80
85
35
A
A
A
2
s
I
2
t
dI/dt
Rate period > 1mn
100
A/μs
V
PP
T
stg
T
j
T
l
note 1
2
kV
°C
°C
°C
- 40 to + 150
- 40 to + 125
260
Parameter
Value
0.1
10
1
Unit
W
W
A
Parameter
Value
Unit
R
th(j-a)
Junction to ambient
TO-220FPAB
TO-220AB
60
°C/W
R
th(j-a)
R
th(j-c)
Junction to ambien (soldered on 1 cm
2
copper pad) D
2
PAK
Junction to case for full cycle sine wave conduction TO-220FPAB
Junction to case for full cycle sine wave conduction TO-220AB
45
3.5
°C/W
°C/W
R
th(j-c)
D
2
PAK
2.5
°C/W
Parameter description
Gate triggering current
Gate triggering voltage
Non triggering voltage
Holding current
Latching current
On state voltage
On state characteristic threshold voltage
On state characteristic dynamic resistance
Forward or reverse leakage current
Static pin OUT voltage rise
Turn off current rate of decay
Avalanche voltage at turn off
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