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| 型号： | AD5235BRU25-RL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 28/32页 |
| 文件大小： | 0K |
| 描述： | IC DGTL POT DUAL 1024POS 16TSSOP |
| 标准包装： | 1 |
| 接片： | 1024 |
| 电阻（欧姆）： | 25k |
| 电路数： | 2 |
| 温度系数： | 标准值 35 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | 4 线 SPI（芯片选择） |
| 电源电压： | 3 V ~ 5.5 V，±2.25 V ~ 2.75 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | AD5235BRU25-RL7DKR |
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Data Sheet
AD5235
Rev. F | Page 5 of 32
Parameter
Symbol
Conditions
Min
Max
Unit
POWER SUPPLIES
Single-Supply Power Range
VDD
VSS = 0 V
2.7
5.5
V
Dual-Supply Power Range
VDD/VSS
±2.25
±2.75
V
Positive Supply Current
IDD
VIH = VDD or VIL = GND
2
5
A
Negative Supply Current
ISS
VDD = +2.5 V, VSS = 2.5 V
VIH = VDD or VIL = GND
4
2
A
EEMEM Store Mode Current
IDD (store)
VIH = VDD or VIL = GND,
VSS = GND, ISS ≈ 0
2
mA
ISS (store)
VDD = +2.5 V, VSS = 2.5 V
2
mA
EEMEM Restore Mode Current7
IDD (restore)
VIH = VDD or VIL = GND,
VSS = GND, ISS ≈ 0
320
A
ISS (restore)
VDD = +2.5 V, VSS = 2.5 V
320
A
Power Dissipation8
PDISS
VIH = VDD or VIL = GND
10
30
W
Power Supply Sensitivity5
PSS
VDD = 5 V ± 10%
0.006
0.01
%/%
DYNAMIC CHARACTERISTICS5, 9
Bandwidth
BW
3 dB, RAB = 25 k/250 k
125/12
kHz
Total Harmonic Distortion
THDW
VA = 1 V rms, VB = 0 V,
f = 1 kHz, code = midscale
RAB = 25 k
0.009
%
RAB = 250 k
0.035
%
VW Settling Time
tS
VA = VDD, VB = 0 V, VW = 0.50% error
band, from zero scale to midscale
RAB = 25 k
4
s
RAB = 250 k
36
s
Resistor Noise Density
eN_WB
RAB = 25 k/250 k
20/64
nV/√Hz
Crosstalk (CW1/CW2)
CT
VA1 = VDD, VB1 = VSS , measured VW2
with VW1 making full-scale change,
RAB = 25 k/250 k
30/60
nV-s
Analog Crosstalk
CTA
VAB2 = 5 V p-p, f = 1 kHz, measured
VW1, Code 1 = midscale, Code 2 =
full scale, RAB = 25 k/250 k
110/100
dB
1
Typicals represent average readings at 25°C and VDD = 5 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. IWB = (VDD 1)/RWB (see Figure 27).
3
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = VSS. DNL specification limits of
±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 28).
4
Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground-
referenced bipolar signal adjustment.
5
Guaranteed by design and not subject to production test.
6
Common-mode leakage current is a measure of the dc leakage from any Terminal A, Terminal B, or Terminal W to a common-mode bias level of VDD/2.
7
EEMEM restore mode current is not continuous. Current is consumed while EEMEM locations are read and transferred to the RDAC register.
8
PDISS is calculated from (IDD × VDD) + (ISS × VSS).
9
All dynamic characteristics use VDD = +2.5 V and VSS = 2.5 V.
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