参数资料
型号: AD5245BRJZ50-R2
厂商: Analog Devices Inc
文件页数: 17/20页
文件大小: 0K
描述: IC DGTL POT 256POS SOT-23-8 T/R
标准包装: 1
接片: 256
电阻(欧姆): 50k
电路数: 1
温度系数: 标准值 45 ppm/°C
存储器类型: 易失
接口: I²C(设备位址)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: SOT-23-8
供应商设备封装: SOT-23-8
包装: 标准包装
其它名称: AD5245BRJZ50-R2DKR
AD5245
Rev. B | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 4.
Parameter
Value
VDD to GND
–0.3 V to +7 V
VA, VB, VW to GND
VDD
Terminal Current, A to B, A to W, B to W1
Pulsed
±20 mA
Continuous
±5 mA
Digital Inputs and Output Voltage to GND
0 V to 7 V
Operating Temperature Range
–40°C to +125°C
Maximum Junction Temperature (TJMAX)
150°C
Storage Temperature Range
–65°C to +150°C
Lead Temperature (Soldering, 10 sec)
245°C
Thermal Resistance2 θJA: SOT-23-8
230°C/W
1 Maximum terminal current is bound by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
2 Package power dissipation = (TJMAX – TA)/θJA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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