参数资料
| 型号： | AD5258BRMZ50 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 20/24页 |
| 文件大小： | 0K |
| 描述： | IC POT DGTL I2C 50K 64P 10MSOP |
| 标准包装： | 50 |
| 接片： | 64 |
| 电阻（欧姆）： | 50k |
| 电路数： | 1 |
| 温度系数： | 标准值 200 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | I²C（设备位址） |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 管件 |
| 产品目录页面： | 787 (CN2011-ZH PDF) |
| 配用： | AD5258EVAL-ND - BOARD EVAL FOR AD5258 DGTL POT |
Data Sheet
AD5258
Rev. D | Page 5 of 24
TIMING CHARACTERISTICS
VDD = VLOGIC = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; 40°C < TA < +85°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
I2C INTERFACE TIMING CHARACTERISTICS
SCL Clock Frequency
fSCL
0
400
kHz
tBUF Bus-Free Time Between Stop and Start
t1
1.3
s
tHD;STA Hold Time (Repeated start)
t2
After this period, the first clock pulse is
generated.
0.6
s
tLOW Low Period of SCL Clock
t3
1.3
s
tHIGH High Period of SCL Clock
t4
0.6
s
tSU;STA Setup Time for Repeated Start Condition
t5
0.6
s
tHD;DAT Data Hold Time
t6
0
0.9
s
tSU;DAT Data Setup Time
t7
100
ns
tF Fall Time of Both SDA and SCL Signals
t8
300
ns
tR Rise Time of Both SDA and SCL Signals
t9
300
ns
tSU;STO Setup Time for Stop Condition
t10
0.6
s
EEPROM Data Storing Time
tEEMEM_STORE
26
ms
EEPROM Data Restoring Time at Power On1
tEEMEM_RESTORE1
VDD rise time dependant. Measure with-
out decoupling capacitors at VDD and GND.
300
s
EEPROM Data Restoring Time upon Restore
Command1
tEEMEM_RESTORE2
VDD = 5 V.
300
s
EEPROM Data Rewritable Time2
tEEMEM_REWRITE
540
s
FLASH/EE MEMORY RELIABILITY
Endurance3
100
700
kCycles
Data Retention4
100
Years
1
During power-up, the output is momentarily preset to midscale before restoring EEPROM content.
2
Delay time after power-on preset prior to writing new EEPROM data.
3
Endurance is qualified to 100,000 cycles per JEDEC Std. 22 Method A117 and is measured at 40°C, +25°C, and +85°C; typical endurance at +25°C is 700,000 cycles.
4
Retention lifetime equivalent at junction temperature (TJ) = 55°C per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6 eV derates
with junction temperature.
05029-
004
t1
SCL
SDA
P
S
P
t3
t2
t8
t9
t8
t9
t4
t5
t7
t6
t10
Figure 3. I2C Interface Timing Diagram
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AD5258BRMZ501 | 制造商:AD 制造商全称:Analog Devices 功能描述:Nonvolatile, I2C-Compatible 64-Position, Digital Potentiometer |
| AD5258BRMZ50-R7 | 功能描述:IC POT DGTL I2C 50K 64P 10MSOP RoHS:是 类别:集成电路 (IC) >> 数据采集 - 数字电位器 系列:- 标准包装:3,000 系列:DPP 接片:32 电阻（欧姆）:10k 电路数:1 温度系数:标准值 300 ppm/°C 存储器类型:非易失 接口:3 线串行（芯片选择，递增，增/减） 电源电压:2.5 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WFDFN 裸露焊盘 供应商设备封装:8-TDFN（2x3） 包装:带卷 (TR) |
| AD5258BRMZ50-R71 | 制造商:AD 制造商全称:Analog Devices 功能描述:Nonvolatile, I2C-Compatible 64-Position, Digital Potentiometer |
| AD5258EVAL | 功能描述:BOARD EVAL FOR AD5258 DGTL POT RoHS:否 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:- 主要目的:数字电位器 嵌入式:- 已用 IC / 零件:AD5258 主要属性:- 次要属性:- 已供物品:板 相关产品:AD5258BRMZ1-ND - IC POT DGTL I2C1K 64P 10MSOPAD5258BRMZ10-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ100-ND - IC POT DGTL I2C 100K 64P 10MSOPAD5258BRMZ50-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ1-R7-ND - IC POT DGTL I2C 1K 64P 10MSOPAD5258BRMZ10-R7-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ50-R7-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ100-R7-ND - IC POT DGTL I2C 100K 64P 10MSOP |
| AD5258EVAL2 | 制造商:AD 制造商全称:Analog Devices 功能描述:Nonvolatile, I2C-Compatible 64-Position, Digital Potentiometer |
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